发明申请
- 专利标题: Plasma processing method and plasma processing apparatus
- 专利标题(中): 等离子体处理方法和等离子体处理装置
-
申请号: US10580036申请日: 2004-11-19
-
公开(公告)号: US20070077737A1公开(公告)日: 2007-04-05
- 发明人: Yasuo Kobayashi , Kohei Kawamura
- 申请人: Yasuo Kobayashi , Kohei Kawamura
- 申请人地址: JP Minato-ku
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2003-389691 20031119
- 国际申请: PCT/JP04/17272 WO 20041119
- 主分类号: H01L21/26
- IPC分类号: H01L21/26 ; H01L21/42 ; H05H1/24
摘要:
A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.
公开/授权文献
- US08017197B2 Plasma processing method and plasma processing apparatus 公开/授权日:2011-09-13