发明申请
- 专利标题： Method for controlling polysilicon removal
- 专利标题（中）： 控制多晶硅去除的方法
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申请号： US11243140申请日： 2005-10-04
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公开(公告)号： US20070077865A1公开(公告)日： 2007-04-05
- 发明人: Jeffrey Dysard , Timothy Johns , Paul Feeney
- 申请人： Jeffrey Dysard , Timothy Johns , Paul Feeney
- 申请人地址： US IL Aurora
- 专利权人： Cabot Microelectronics Corporation
- 当前专利权人： Cabot Microelectronics Corporation
- 当前专利权人地址： US IL Aurora
- 主分类号： B24B7/30
- IPC分类号： B24B7/30 ; B24B1/00
摘要：
The invention is directed to a method of chemically-mechanically polishing a substrate comprising polysilicon and a material selected from silicon oxide and silicon nitride with a chemical-mechanical polishing system comprising an abrasive, a polyethylene oxide/polypropylene oxide copolymer, water, and a polishing pad.
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