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    Compositions and methods for polishing silicon nitride materials
    1.
    发明授权
    Compositions and methods for polishing silicon nitride materials 有权
    用于研磨氮化硅材料的组合物和方法

    公开(公告)号：US08759216B2

    公开(公告)日：2014-06-24

    申请号：US11448205

    申请日：2006-06-07

    申请人： Jeffrey Dysard ,  Sriram Anjur ,  Timothy Johns ,  Zhan Chen

    发明人： Jeffrey Dysard ,  Sriram Anjur ,  Timothy Johns ,  Zhan Chen

    IPC分类号： H01L21/302 ,  H01L21/336 ,  C03C15/00 ,  C03C25/68

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

    摘要： The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.

    摘要翻译： 本发明提供一种研磨含氮化硅的基板的方法。 该方法包括用抛光组合物研磨氮化硅衬底的表面，抛光组合物包括胶体二氧化硅，至少一种酸性组分和水性载体。 所述至少一种酸性组分的pKa在约1至4.5的范围内。 所述组合物的pH值比所述至少一种酸性组分的pKa小约0.5pH单位至大于pKa约1.5pH单位。

    METHOD TO SELECTIVELY POLISH SILICON CARBIDE FILMS
    3.
    发明申请
    METHOD TO SELECTIVELY POLISH SILICON CARBIDE FILMS 有权
    选择性硅碳膜的方法

    公开(公告)号：US20100144149A1

    公开(公告)日：2010-06-10

    申请号：US12630288

    申请日：2009-12-03

    申请人： WILLIAM WARD ,  TIMOTHY JOHNS

    发明人： WILLIAM WARD ,  TIMOTHY JOHNS

    IPC分类号： H01L21/306

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/3212 ,  H01L29/1608

    摘要： The present invention provides a method for selectively removing silicon carbide from the surface of a substrate in preference to silicon dioxide. The method comprises abrading a surface of substrate with a polishing composition that comprises a particulate abrasive, at least one acidic buffering agent, and an aqueous carrier.

    摘要翻译： 本发明提供了一种从二氧化硅中优先选择性除去碳化硅表面的方法。 该方法包括用包含微粒磨料，至少一种酸性缓冲剂和水性载体的抛光组合物研磨衬底的表面。

    Method of polishing a silicon-containing dielectric
    4.
    发明申请
    Method of polishing a silicon-containing dielectric 审中-公开

    公开(公告)号：US20060144824A1

    公开(公告)日：2006-07-06

    申请号：US11370077

    申请日：2006-03-07

    申请人： Phillip Carter ,  Timothy Johns

    发明人： Phillip Carter ,  Timothy Johns

    IPC分类号： C03C15/00 ,  H01L21/306 ,  B44C1/22 ,  C23F1/00

    CPC分类号： C09K3/1463 ,  C03C19/00 ,  C09G1/02 ,  H01L21/31053

    摘要： The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pKa of about 4 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.

    Compositions and methods for polishing silicon nitride materials
    10.
    发明申请
    Compositions and methods for polishing silicon nitride materials 有权
    用于研磨氮化硅材料的组合物和方法

    公开(公告)号：US20070298612A1

    公开(公告)日：2007-12-27

    申请号：US11448205

    申请日：2006-06-07

    申请人： Jeffrey Dysard ,  Sriram Anjur ,  Timothy Johns ,  Zhan Chen

    发明人： Jeffrey Dysard ,  Sriram Anjur ,  Timothy Johns ,  Zhan Chen

    IPC分类号： C03C15/00 ,  H01L21/302

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

    摘要： The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.

    摘要翻译： 本发明提供一种研磨含氮化硅的基板的方法。 该方法包括用抛光组合物研磨氮化硅衬底的表面，抛光组合物包括胶体二氧化硅，至少一种酸性组分和水性载体。 所述至少一种酸性组分的pKa在约1至4.5的范围内。 所述组合物的pH值比所述至少一种酸性组分的pKa小约0.5pH单位至大于pKa约1.5pH单位。