Invention Application
US20070082457A1 Method For Filling Of Nanoscale Holes And Trenches And For Planarizing Of A Wafer Surface 有权
填充纳米孔和沟槽以及平面化晶圆表面的方法

Method For Filling Of Nanoscale Holes And Trenches And For Planarizing Of A Wafer Surface
Abstract:
A processing method for use in the fabrication of fabrication of nanoscale electronic, optical, magnetic, biological, and fluidic devices and structures, for filling nanoscale holes and trenches, for planarizing a wafer surface, or for achieving both filling and planarizing of a wafer surface simultaneously. The method has the initial step of depositing a layer of a meltable material on a wafer surface. The material is then pressed using a transparent mold while shining a light pulse through the transparent mold to melt the deposited layer of meltable material. A flow of the molten layer material fills the holes and trenches, and conforms to surface features on the transparent mold. The transparent mold is subsequently removed.
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