发明申请
US20070087067A1 Semiconductor die having a protective periphery region and method for forming 审中-公开
具有保护性周边区域的半导体管芯及其形成方法

Semiconductor die having a protective periphery region and method for forming
摘要:
A die (10) for an integrated circuit comprising an active area (22) is provided. The die (10) may further comprise a first ring (12) in a peripheral region of the die (10) at least partially surrounding the active area (22), wherein the first ring (12) may comprise a plurality of polygon shaped cells (32, 36). The die (10) may further comprise a second ring (14) surrounding the first ring (12), wherein the second ring (14) may comprise a plurality of polygon shaped cells (32, 36).
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