发明申请
US20070087067A1 Semiconductor die having a protective periphery region and method for forming
审中-公开
具有保护性周边区域的半导体管芯及其形成方法
- 专利标题: Semiconductor die having a protective periphery region and method for forming
- 专利标题(中): 具有保护性周边区域的半导体管芯及其形成方法
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申请号: US11252409申请日: 2005-10-18
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公开(公告)号: US20070087067A1公开(公告)日: 2007-04-19
- 发明人: Yuan Yuan , Chu-Chung Lee , Tu-Anh Tran , Paul Winebarger
- 申请人: Yuan Yuan , Chu-Chung Lee , Tu-Anh Tran , Paul Winebarger
- 主分类号: B23B19/00
- IPC分类号: B23B19/00
摘要:
A die (10) for an integrated circuit comprising an active area (22) is provided. The die (10) may further comprise a first ring (12) in a peripheral region of the die (10) at least partially surrounding the active area (22), wherein the first ring (12) may comprise a plurality of polygon shaped cells (32, 36). The die (10) may further comprise a second ring (14) surrounding the first ring (12), wherein the second ring (14) may comprise a plurality of polygon shaped cells (32, 36).
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