公开(公告)号：US09437459B2

公开(公告)日：2016-09-06

申请号：US14267378

申请日：2014-05-01

申请人： Burton J. Carpenter ,  Chu-Chung Lee ,  Tu-Anh N. Tran

发明人： Burton J. Carpenter ,  Chu-Chung Lee ,  Tu-Anh N. Tran

IPC分类号： H01L21/48 ,  H01L21/56 ,  H01L23/498 ,  H01L23/31

CPC分类号： H01L21/4853 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49866 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48091 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： An electronic component package that includes a package substrate having an aluminum bond pad formed from an aluminum clad copper structure. The aluminum clad copper structure is attached to a dielectric layer. An electronic component is attached to the substrate and includes a conductive structure electrically coupled to the aluminum bond pad. The aluminum bond pad, the electronic component, and at least a portion of the substrate are encapsulated with an encapsulant.

摘要翻译： 一种电子部件封装，其包括具有由铝包铜结构形成的铝接合焊盘的封装基板。 铝包铜结构附着在电介质层上。 电子部件附接到基板并且包括电耦合到铝接合焊盘的导电结构。 铝合金焊盘，电子部件以及基板的至少一部分用密封剂封装。

公开(公告)号：US09331050B2

公开(公告)日：2016-05-03

申请号：US13355748

申请日：2012-01-23

申请人： Kevin J. Hess ,  Chu-Chung Lee

发明人： Kevin J. Hess ,  Chu-Chung Lee

IPC分类号： H01L23/00

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/49171 ,  H01L2224/78301 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00013

摘要： Methods of forming gold-aluminum electrical interconnects are described. The method may include interposing a diffusion retardant layer between the gold and the aluminum, the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material; bringing into contact the diffusion retardant layer, the gold, and the aluminum; forming alloys of gold and the diffusion retardant material in regions containing the material and forming gold-aluminum intermetallic compounds in regions substantially devoid of the material; and forming a continuous electrically conducting path between the aluminum and the gold. A structure for gold-aluminum interconnect is provided. The structure may include an aluminum alloy bond pad and a diffusion retardant layer in contact with the bond pad, the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material. The structure may include a gold free air ball in contact with the diffusion retardant layer.

摘要翻译： 描述形成金 - 铝电互连的方法。 该方法可以包括在金和铝之间插入扩散阻挡层，扩散阻挡层包含含有基本上没有扩散阻挡材料的区域; 与扩散阻挡层，金和铝接触; 在含有材料的区域中形成金和扩散阻挡材料的合金，并在基本上不含该材料的区域中形成金 - 铝金属间化合物; 并在铝和金之间形成连续的导电路径。 提供了金 - 铝互连结构。 该结构可以包括铝合金接合焊盘和与接合焊盘接触的扩散阻挡层，扩散阻挡层包括含有基本上没有扩散阻挡材料的区域。 该结构可以包括与扩散阻挡层接触的无金空气球。

公开(公告)号：US20150303169A1

公开(公告)日：2015-10-22

申请号：US14255450

申请日：2014-04-17

申请人： Tu-Anh N. Tran ,  Yin Kheng Au ,  Burton J. Carpenter ,  Chu-Chung Lee

发明人： Tu-Anh N. Tran ,  Yin Kheng Au ,  Burton J. Carpenter ,  Chu-Chung Lee

IPC分类号： H01L23/00

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85444 ,  H01L2224/85801 ,  H01L2924/00014 ,  H01L2924/15747 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00

摘要： A method for forming a semiconductor device includes forming a first ball bond on a first contact pad, in which the first ball bond has a first wire segment of a bonding wire extending from the ball bond; forming a mid-span ball in the first wire segment at a first distance from the ball bond; and after the forming the mid-span ball, attaching the mid-span ball to a second contact pad to form a second ball bond.

摘要翻译： 一种形成半导体器件的方法包括在第一接触焊盘上形成第一球焊，其中第一球焊接具有从球焊接延伸的接合线的第一线段; 在距离球接头的第一距离处在第一线段中形成中跨球; 并且在形成中跨球之后，将中跨球附接到第二接触垫以形成第二球接合。

公开(公告)号：US20150090480A1

公开(公告)日：2015-04-02

申请号：US14042662

申请日：2013-09-30

申请人： TU-ANH N. TRAN ,  Chu-Chung Lee

发明人： TU-ANH N. TRAN ,  Chu-Chung Lee

IPC分类号： H05K1/11 ,  H05K3/40 ,  H05K1/09

CPC分类号： H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/04042 ,  H01L2224/05017 ,  H01L2224/05085 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85207 ,  H01L2224/8581 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  Y10T29/49124 ,  H01L2924/01004 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/01012 ,  H01L2924/01016 ,  H01L2924/00014 ,  H01L2924/00

摘要： An electronic component package includes a substrate and dielectric structure. The dielectric structure includes a top surface having a protrusion portion and a lower portion. The protrusion portion is located at first height that is greater than a second height of the lower portion. A conductive bond pad is located over the dielectric structure. A ball bond electrically couples the bond pad and a bond wire. An intermetallic compound located between the ball bond and bond pad is formed of material of the ball bond and bond pad and electrically couples the bond pad to the ball bond. A portion of the bond pad is vertically located between a portion of the lower portion of the top surface of the dielectric structure and the intermetallic compound. No portion of the bond pad is vertically located between at least a portion of the protrusion portion and the intermetallic compound.

摘要翻译： 电子部件封装包括基板和电介质结构。 电介质结构包括具有突出部分和下部分的顶表面。 突出部位于大于下部的第二高度的第一高度。 导电接合焊盘位于电介质结构之上。 球接合电耦合接合焊盘和接合线。 位于球焊接和焊盘之间的金属间化合物由球焊和焊盘的材料形成，并将焊接焊盘电连接到球焊上。 接合焊盘的一部分垂直地位于电介质结构的顶表面的下部的一部分和金属间化合物之间。 接合焊盘的没有部分垂直地位于突出部分的至少一部分和金属间化合物之间。

公开(公告)号：US08912667B2

公开(公告)日：2014-12-16

申请号：US13362636

申请日：2012-01-31

申请人： Robert J. Wenzel ,  Kevin J. Hess ,  Chu-Chung Lee

发明人： Robert J. Wenzel ,  Kevin J. Hess ,  Chu-Chung Lee

IPC分类号： H01L29/40 ,  H01L21/44 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

CPC分类号： H01L23/5329 ,  H01L21/02126 ,  H01L23/295 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/32225 ,  H01L2224/48135 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49095 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device includes an integrated circuit die on a substrate. A first subset of wire bonds is between the substrate and the die. A second subset of wire bonds is between the substrate and the die. A dielectric material coats the first subset of the wire bonds along a majority of length of the first subset of the wire bonds. A medium is in contact with the second subset of the wire bonds along a majority of length of the second subset of the wire bonds.

摘要翻译： 半导体器件包括在衬底上的集成电路管芯。 引线键合的第一子集在基片和芯片之间。 引线键合的第二个子集在基片和芯片之间。 电介质材料沿引线键的第一子集的大部分长度覆盖引线键的第一子集。 介质沿着线接合的第二子集的长度的大部分与引线键的第二子集接触。

公开(公告)号：US20120025401A1

公开(公告)日：2012-02-02

申请号：US12844922

申请日：2010-07-28

申请人： CHU-CHUNG LEE ,  Kian Leong Chin ,  Kevin J. Hess ,  Patrick Johnston ,  Tu-Anh N. Tran ,  Heng Keong Yip

发明人： CHU-CHUNG LEE ,  Kian Leong Chin ,  Kevin J. Hess ,  Patrick Johnston ,  Tu-Anh N. Tran ,  Heng Keong Yip

IPC分类号： H01L23/488 ,  H01L21/768

CPC分类号： H01L24/81 ,  H01L21/56 ,  H01L23/62 ,  H01L24/11 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An integrated circuit package includes a semiconductor die attached to a package support. The die has a plurality of peripheral bond pads along a periphery of the die and a first bond pad on an interior portion of the die wherein the first bond pad is a power supply bond pad. A conductive distributor is over the die and within a perimeter of the die and has a first opening. The plurality of bond pads are located between the perimeter of the die and a perimeter of the conductive distributor. The first bond pad is in the first opening. A first bond wire is connected between the first bond pad and the conductive distributor. A second bond wire is connected between a first peripheral bond pad of the plurality of peripheral bond pads and the conductive distributor.

摘要翻译： 集成电路封装包括附接到封装支撑件的半导体管芯。 所述管芯具有沿所述管芯的周边的多个外围接合焊盘和所述管芯的内部部分上的第一接合焊盘，其中所述第一接合焊盘是电源接合焊盘。 导电分布器在模具之上并且在模具的周边内并且具有第一开口。 多个接合焊盘位于模具的周边和导电分配器的周边之间。 第一个焊盘在第一个开口。 第一接合线连接在第一接合焊盘和导电分布器之间。 第二接合线连接在多个外围接合焊盘的第一外围接合焊盘和导电分布器之间。

公开(公告)号：US07829997B2

公开(公告)日：2010-11-09

申请号：US11732594

申请日：2007-04-04

申请人： Kevin J. Hess ,  Chu-Chung Lee ,  James W. Miller

发明人： Kevin J. Hess ,  Chu-Chung Lee ,  James W. Miller

IPC分类号： H01L23/52

CPC分类号： H01L23/50 ,  H01L23/3121 ,  H01L24/05 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/91 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/4917 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor device (601) is provided which comprises a substrate (603); a semiconductor device (605) disposed on said substrate and having a first major surface; a first metal strap (615) which is in electrical contact with said substrate and which is adapted to provide power to a first region (608) of said semiconductor device; and a second metal strap (616) which is in electrical contact with said substrate and which is adapted to provide ground to a second region (609) of said semiconductor device.

摘要翻译： 提供了一种半导体器件（601），其包括衬底（603）; 设置在所述基板上并具有第一主表面的半导体器件（605） 第一金属带（615），其与所述基板电接触并且适于向所述半导体器件的第一区域（608）供电; 以及第二金属带（616），其与所述衬底电接触并适于提供到所述半导体器件的第二区域（609）的接地。

公开(公告)号：US20100052106A1

公开(公告)日：2010-03-04

申请号：US12201623

申请日：2008-08-29

申请人： Chu-Chung LEE ,  Min DING ,  Kevin J. Hess ,  Peng SU

发明人： Chu-Chung LEE ,  Min DING ,  Kevin J. Hess ,  Peng SU

IPC分类号： H01L23/02 ,  H01L21/56

CPC分类号： H01L23/562 ,  H01L23/16 ,  H01L23/3192 ,  H01L23/585 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/01079 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A package device has a package substrate, a semiconductor die on the package substrate, and a molding compound on the package substrate and over the semiconductor die. The semiconductor die has a last passivation layer, an active circuit region in an internal portion of the die, an edge seal region along a periphery of the die, and a structure over the edge seal region extending above the last passivation layer, covered by the molding compound, and comprising a polymer material. The structure may extend at least five microns above the last passivation layer. The structure stops cracks in the molding compound from reaching the active circuit region. The cracks, if not stopped, can reach wire bonds in the active region and cause them to fail.

摘要翻译： 封装器件具有封装衬底，封装衬底上的半导体管芯，以及封装衬底上的半导体管芯上的模制化合物。 半导体管芯具有最后的钝化层，在管芯的内部部分中的有源电路区域，沿着管芯周边的边缘密封区域以及在最后钝化层上方延伸的边缘密封区域上的结构，被覆盖在 模塑料，并且包含聚合物材料。 该结构可以延伸至最后钝化层上方至少五微米。 该结构阻止模塑料中的裂纹到达有源电路区域。 裂纹如果不停止，可以在活动区域​​中达到引线键，并导致它们失效。

公开(公告)号：US07656045B2

公开(公告)日：2010-02-02

申请号：US11360336

申请日：2006-02-23

申请人： Chu-Chung Lee ,  Kevin J. Hess

发明人： Chu-Chung Lee ,  Kevin J. Hess

IPC分类号： H01L29/40 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05624 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48799 ,  H01L2224/85205 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01201 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/01203 ,  H01L2224/05147 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/01202

摘要： A bond pad for an electronic device such as an integrated circuit makes electrical connection to an underlying device via an interconnect layer. The bond pad has a first layer of a material that is aluminum and copper and a second layer, over the first layer, of a second material that is aluminum and is essentially free of copper. The second layer functions as a cap to the first layer for preventing copper in the first layer from being corroded by residual chemical elements. A wire such as a gold wire may be bonded to the second layer of the bond pad.

摘要翻译： 用于诸如集成电路的电子器件的接合焊盘通过互连层电连接到下面的器件。 接合焊盘具有铝和铜的材料的第一层，在第一层上具有作为铝的第二材料的第二层，并且基本上不含铜。 第二层用作第一层的帽，以防止第一层中的铜被残留的化学元素腐蚀。 诸如金线的线可以结合到接合焊盘的第二层。

公开(公告)号：US20080179745A1

公开(公告)日：2008-07-31

申请号：US11669556

申请日：2007-01-31

申请人： Kevin J. Hess ,  Chu-Chung Lee

发明人： Kevin J. Hess ,  Chu-Chung Lee

IPC分类号： H01L23/52 ,  H01L23/48

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/49171 ,  H01L2224/78301 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00013

摘要： In some embodiments a method of forming a gold-aluminum electrical interconnect is described. The method may include interposing a diffusion retardant layer between the gold and the aluminum (1002), the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material; bringing into contact the diffusion retardant layer, the gold, and the aluminum (1004); forming alloys of gold and the diffusion retardant material in regions containing the material (1006) and forming gold-aluminum intermetallic compounds in regions substantially devoid of the material (1008); and forming a continuous electrically conducting path between the aluminum and the gold (1010). In some embodiments, a structure useful in a gold-aluminum interconnect is provided. The structure may include an aluminum alloy bond pad (530) and a diffusion retardant layer (520) in contact with the bond pad, the diffusion retardant layer including regions (522) containing and regions (524) substantially devoid of a diffusion retardant material. The structure may include a gold free air ball (714) in contact with the diffusion retardant layer.

摘要翻译： 在一些实施例中描述了形成金 - 铝电互连的方法。 该方法可以包括在金和铝之间插入扩散阻挡层（1002），扩散阻挡层包含含有基本上没有扩散阻挡材料的区域; 与扩散阻挡层，金和铝接触（1004）; 在含有材料（1006）的区域中形成金和扩散阻挡材料的合金并在基本上不含材料（1008）的区域中形成金 - 铝金属间化合物; 以及在所述铝和所述金（1010）之间形成连续的导电路径。 在一些实施例中，提供了可用于金 - 铝互连的结构。 该结构可以包括与接合焊盘接触的铝合金接合焊盘（530）和扩散阻挡层（520），所述扩散阻挡层包括含有基本上没有扩散阻挡材料的区域（522）和区域（524）。 该结构可以包括与扩散阻挡层接触的无金空气球（714）。