发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US11565429申请日： 2006-11-30
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公开(公告)号： US20070087535A1公开(公告)日： 2007-04-19
- 发明人: Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
- 申请人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-125409 20040421
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/44
摘要：
A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.
公开/授权文献
- US07396707B2 Fabrication method of a semiconductor device 公开/授权日：2008-07-08
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