发明申请
- 专利标题: Semiconductor integrated circuit and method of fabricating the same
- 专利标题(中): 半导体集成电路及其制造方法
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申请号: US11542271申请日: 2006-10-04
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公开(公告)号: US20070089014A1公开(公告)日: 2007-04-19
- 发明人: Takashi Ishimura , Kenichiro Uda , Yoko Shimada , Katsuya Fujimura , Kasumi Hamaguchi , Kenichirou Higashi
- 申请人: Takashi Ishimura , Kenichiro Uda , Yoko Shimada , Katsuya Fujimura , Kasumi Hamaguchi , Kenichirou Higashi
- 优先权: JP2005-291340 20051004
- 主分类号: G01R31/28
- IPC分类号: G01R31/28 ; G06F11/00
摘要:
To provide a semiconductor integrated circuit device in which an occupied area is suppressed from increasing and a high-performance test circuit is included, There is provided a semiconductor integrated circuit having a test circuit, by determining arrangement positions of cells forming a circuit to be tested and non-connected cells prepared to form a test circuit and then determining a connection relationship among the non-connected cells prepared to form the test circuit on the basis of the arrangement information to thereby form the test circuit.
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