发明申请
US20070091539A1 Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
有权
具有前馈热控制系统的等离子体反应器,其使用用于适应RF功率变化或晶片温度变化的热模型
- 专利标题: Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
- 专利标题(中): 具有前馈热控制系统的等离子体反应器,其使用用于适应RF功率变化或晶片温度变化的热模型
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申请号: US11409183申请日: 2006-04-21
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公开(公告)号: US20070091539A1公开(公告)日: 2007-04-26
- 发明人: Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
- 申请人: Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 主分类号: H01T23/00
- IPC分类号: H01T23/00
摘要:
A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.
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