MULTI-ZONED PLASMA PROCESSING ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE UNIFORMITY
    3.
    发明申请
    MULTI-ZONED PLASMA PROCESSING ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE UNIFORMITY 审中-公开
    具有改进温度均匀性的多区等离子体处理静电卡

    公开(公告)号:US20140346743A1

    公开(公告)日:2014-11-27

    申请号:US14447557

    申请日:2014-07-30

    IPC分类号: B23B31/28 B23Q3/15

    摘要: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

    摘要翻译: 一种静电卡盘组件,包括具有顶表面以支撑工件的电介质层。 布置在电介质层下方的冷却通道底座包括设置在顶表面的内部下方的多个内部流体导管,以及设置在顶部表面的外部部分下方的多个外部流体导管。 卡盘组件包括设置在内部和外部流体管道之间的冷却通道底部内的热断裂。 卡盘组件包括布置在冷却通道底部和底板下方的流体分配板,用于将从公共输入端输送的传热流体分配到每个内部或外部流体导管。 内部输入歧管的分支可以具有基本相等的流体电导。

    Multi-zoned plasma processing electrostatic chuck with improved temperature uniformity
    5.
    发明授权
    Multi-zoned plasma processing electrostatic chuck with improved temperature uniformity 有权
    多区域等离子处理静电卡盘具有改善的温度均匀性

    公开(公告)号:US08822876B2

    公开(公告)日:2014-09-02

    申请号:US13081412

    申请日:2011-04-06

    IPC分类号: B23K10/00 H05H1/46

    摘要: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

    摘要翻译: 一种静电卡盘组件,包括具有顶表面以支撑工件的电介质层。 布置在电介质层下方的冷却通道底座包括设置在顶表面的内部下方的多个内部流体导管,以及设置在顶部表面的外部部分下方的多个外部流体导管。 卡盘组件包括设置在内部和外部流体管道之间的冷却通道底部内的热断裂。 卡盘组件包括设置在冷却通道底部和底板下方的流体分配板,用于将从公共输入端输送的传热流体分配到每个内部或外部流体导管。 内部输入歧管的分支可以具有基本相等的流体电导。

    Assembly for delivering RF power and DC voltage to a plasma processing chamber
    6.
    发明授权
    Assembly for delivering RF power and DC voltage to a plasma processing chamber 有权
    用于向等离子体处理室提供RF功率和DC电压的组件

    公开(公告)号:US08629370B2

    公开(公告)日:2014-01-14

    申请号:US13085070

    申请日:2011-04-12

    IPC分类号: H05H1/46

    摘要: A triaxial rod assembly for providing both RF power and DC voltage to a chuck assembly that supports a workpiece in a processing chamber during a manufacturing operation. In embodiments, a rod assembly includes a center conductor to be coupled to a chuck electrode for providing DC voltage to clamp a workpiece. Concentrically surrounding the center conductor is an annular RF transmission line to be coupled to an RF powered base to provide RF power to the chuck assembly. An insulator is disposed between the center conductor and RF transmission line. Concentrically surrounding the RF transmission line is a ground plane conductor coupled to a grounded base of the chuck to provide a reference voltage relative to the DC voltage. An insulator is disposed between the RF transmission line and the ground plane conductor.

    摘要翻译: 一种三轴杆组件,用于在制造操作期间向卡盘组件提供RF功率和DC电压,该卡盘组件在处理室中支撑工件。 在实施例中,杆组件包括要耦合到卡盘电极的中心导体,用于提供直流电压以夹紧工件。 集中地围绕中心导体是环形RF传输线,其被耦合到RF供电底座以向卡盘组件提供RF功率。 绝缘体设置在中心导体和RF传输线之间。 集中围绕RF传输线是一个接地平面导体,其耦合到卡盘的接地基座,以提供相对于直流电压的参考电压。 绝缘体设置在RF传输线和接地平面导体之间。

    DISTRIBUTED ELECTRO-STATIC CHUCK COOLING
    7.
    发明申请
    DISTRIBUTED ELECTRO-STATIC CHUCK COOLING 审中-公开
    分布式电动止动冷却

    公开(公告)号:US20130276981A1

    公开(公告)日:2013-10-24

    申请号:US13863226

    申请日:2013-04-15

    IPC分类号: H05H1/00

    摘要: Embodiments of the invention include an apparatus, system, and method for cooling a pedestal for supporting a workpiece during plasma processing. An embodiment of a pedestal includes: a base over which the workpiece is to be disposed, a plurality of nozzles to supply a fluid from a supply plenum to impinge on a surface of the base, and a plurality of return conduits to return the supplied fluid to a return plenum. The fluid to be supplied by the plurality of nozzles can be projected as one or more jets submerged in surrounding fluid or as a spray that emerges from a surrounding fluid within a volume between the plurality of nozzles and the base to impinge on the surface of the base.

    摘要翻译: 本发明的实施例包括用于在等离子体处理期间冷却用于支撑工件的基座的装置,系统和方法。 基座的一个实施例包括:一个基座,工件将被放置在该基座上;多个喷嘴,用于从供应气室供应冲击基座表面的流体;以及多个返回导管,用于使所提供的流体 到一个回报室。 由多个喷嘴供应的流体可以作为浸没在周围流体中的一个或多个射流投影,或者作为从多个喷嘴和基座之间的体积内的周围流体出射的喷射物投射到 基础。

    Capacitively coupled plasma reactor having very agile wafer temperature control
    9.
    发明授权
    Capacitively coupled plasma reactor having very agile wafer temperature control 有权
    具有非常敏捷的晶片温度控制的电容耦合等离子体反应器

    公开(公告)号:US08157951B2

    公开(公告)日:2012-04-17

    申请号:US11408333

    申请日:2006-04-21

    摘要: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.

    摘要翻译: 用于加工工件的等离子体反应器包括反应室,腔室内的静电吸盘具有用于支撑工件的顶表面,并且在顶表面上具有凹陷,每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。 反应器还包括热耦合到静电卡盘的热控制装置,RF等离子体偏置功率发生器,其被耦合以向静电卡盘施加RF功率,导热气体的加压气体供应,将加压气体供应连接到 所述凹槽有助于用导热气体填充通道,用于在工件的背面与静电卡盘之间传热,其传热速率是导热气体工件背面压力的函数。 反应器还包括敏捷工件温度控制回路,其包括(a)静电卡盘中的温度探针,和(b)耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器,控制器控制 气体阀响应于温度探头的输出与所需温度之间的差异。

    APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SUBSTRATE
    10.
    发明申请
    APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SUBSTRATE 有权
    用于控制基板温度均匀性的装置

    公开(公告)号:US20110180243A1

    公开(公告)日:2011-07-28

    申请号:US12886255

    申请日:2010-09-20

    IPC分类号: F28F3/12

    CPC分类号: F28F3/12 F28F2013/001

    摘要: Apparatus for controlling thermal uniformity of a substrate is provided herein. In some embodiments, the thermal uniformity of the substrate may be controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate may include a substrate support having a support surface to support a substrate thereon; and a plurality of flow paths having a substantially equivalent fluid conductance disposed within the substrate support to flow a heat transfer fluid beneath the support surface.

    摘要翻译: 本文提供了用于控制基板的热均匀性的装置。 在一些实施例中,可以将衬底的热均匀性控制得更均匀。 在一些实施例中,可以将所述衬底的热均匀性控制为以所需图案不均匀。 在一些实施例中,用于控制衬底的热均匀性的装置可以包括具有用于在其上支撑衬底的支撑表面的衬底支撑件; 以及多个流动路径,其具有设置在所述基板支撑件内的基本相当的流体电导,以使传热流体在所述支撑表面下方流动。