发明申请
- 专利标题： TRANSISTOR WITH DIELECTRIC STRESSOR ELEMENTS
- 专利标题（中）： 具有介质压力元件的晶体管
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申请号： US11163683申请日： 2005-10-27
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公开(公告)号： US20070096215A1公开(公告)日： 2007-05-03
- 发明人: Dureseti Chidambarrao , Brian Greene , Kern Rim
- 申请人： Dureseti Chidambarrao , Brian Greene , Kern Rim
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/8238
摘要：
A chip is provided which includes an active semiconductor region and a field effect transistor (“FET”) having a channel region, a source region and a drain region all disposed within the active semiconductor region. The FET has a longitudinal direction in a direction of a length of the channel region, and a transverse direction in a direction of a width of the channel region. A dielectric stressor element having a horizontally extending upper surface extends below a portion of the active semiconductor region. The dielectric stressor element shares an edge with the active semiconductor region, the edge extending in a direction away from the upper surface. In particular structures, two or more dielectric stressor elements are provided at locations opposite from each other in the longitudinal and/or transverse directions of the FET.
公开/授权文献
- US07759739B2 Transistor with dielectric stressor elements 公开/授权日：2010-07-20
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