发明申请
US20070099378A1 SEMICONDUCTOR DEVICE HAVING ALIGN KEY AND METHOD OF FABRICATING THE SAME
失效
具有对准关键的半导体器件及其制造方法
- 专利标题： SEMICONDUCTOR DEVICE HAVING ALIGN KEY AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 具有对准关键的半导体器件及其制造方法
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申请号： US11535934申请日： 2006-09-27
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公开(公告)号： US20070099378A1公开(公告)日： 2007-05-03
- 发明人: Sang-Su KIM , In-Wook Cho , Myeong-Cheol Kim , Sung-Woo Lee , Jin-Hee Kim , Doo-Youl Lee , Sung-Ho Kim
- 申请人： Sang-Su KIM , In-Wook Cho , Myeong-Cheol Kim , Sung-Woo Lee , Jin-Hee Kim , Doo-Youl Lee , Sung-Ho Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR2003-81873 20031118
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/00
摘要：
Disclosed is a semiconductor device having an align key and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having a cell area and an align key area. An isolation layer that defines a cell active area is disposed in the cell area of the semiconductor substrate. A cell charge storage layer pattern is disposed across the cell active area. An align charge storage layer pattern is disposed in the align key area of the semiconductor substrate. An align trench self-aligned with the align charge storage layer pattern is formed in the align key area of the semiconductor substrate.
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