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    Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same
    5.
    发明授权
    Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same 有权
    具有浮动阱式非易失性存储单元的半导体器件及其制造方法

    公开(公告)号：US07045850B2

    公开(公告)日：2006-05-16

    申请号：US10844783

    申请日：2004-05-13

    申请人： Sang-Su Kim ,  Kwang-Wook Koh ,  Geum-Jong Bae ,  Ki-Chul Kim ,  Sung-Ho Kim ,  Jin-Hee Kim ,  In-Wook Cho

    发明人： Sang-Su Kim ,  Kwang-Wook Koh ,  Geum-Jong Bae ,  Ki-Chul Kim ,  Sung-Ho Kim ,  Jin-Hee Kim ,  In-Wook Cho

    IPC分类号： H01L29/76

    CPC分类号： H01L27/11568 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546

    摘要： The present invention discloses a semiconductor device having a floating trap type nonvolatile memory cell and a method for manufacturing the same. The method includes providing a semiconductor substrate having a nonvolatile memory region, a first region, and a second region. A triple layer composed of a tunnel oxide layer, a charge storing layer and a first deposited oxide layer on the semiconductor substrate is formed sequentially The triple layer on the semiconductor substrate except the nonvolatile memory region is then removed. A second deposited oxide layer is formed on an entire surface of the semiconductor substrate including the first and second regions from which the triple layer is removed. The second deposited oxide layer on the second region is removed, and a first thermal oxide layer is formed on the entire surface of the semiconductor substrate including the second region from which the second deposited oxide layer is removed. The semiconductor device can be manufactured according to the present invention to have a reduced processing time and a reduced change of impurity doping profile. The thickness of a blocking oxide layer and a high voltage gate oxide layer can be controlled.

    摘要翻译： 本发明公开了一种具有浮动阱式非易失性存储单元的半导体器件及其制造方法。 该方法包括提供具有非易失性存储区域，第一区域和第二区域的半导体衬底。 依次形成由半导体衬底上的隧道氧化物层，电荷存储层和第一沉积氧化物层构成的三层，然后除去非易失性存储区域之外的半导体衬底上的三层。 第二沉积氧化物层形成在半导体衬底的包括去除三层的第一和第二区域的整个表面上。 去除第二区域上的第二沉积氧化物层，并且在包括除去第二沉积氧化物层的第二区域的半导体衬底的整个表面上形成第一热氧化物层。 可以根据本发明制造半导体器件以减少处理时间和降低杂质掺杂分布的变化。 可以控制阻挡氧化物层和高电压栅极氧化物层的厚度。

    Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same
    7.
    发明授权
    Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same 失效
    具有浮动阱型非易失性存储单元的半导体器件及其制造方法

    公开(公告)号：US07371640B2

    公开(公告)日：2008-05-13

    申请号：US11378505

    申请日：2006-03-17

    申请人： Sang-Su Kim ,  Kwang-Wook Koh ,  Geum-Jong Bae ,  Ki-Chul Kim ,  Sung-Ho Kim ,  Jin-Hee Kim ,  In-Wook Cho

    发明人： Sang-Su Kim ,  Kwang-Wook Koh ,  Geum-Jong Bae ,  Ki-Chul Kim ,  Sung-Ho Kim ,  Jin-Hee Kim ,  In-Wook Cho

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11568 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546

    摘要： The present invention discloses a semiconductor device having a floating trap type nonvolatile memory cell and a method for manufacturing the same. The method includes providing a semiconductor substrate having a nonvolatile memory region, a first region, and a second region. A triple layer composed of a tunnel oxide layer, a charge storing layer and a first deposited oxide layer on the semiconductor substrate is formed sequentially. The triple layer on the semiconductor substrate except the nonvolatile memory region is then removed. A second deposited oxide layer is formed on an entire surface of the semiconductor substrate including the first and second regions from which the triple layer is removed. The second deposited oxide layer on the second region is removed, and a first thermal oxide layer is formed on the entire surface of the semiconductor substrate including the second region from which the second deposited oxide layer is removed. The semiconductor device can be manufactured according to the present invention to have a reduced processing time and a reduced change of impurity doping profile. The thickness of a blocking oxide layer and a high voltage gate oxide layer can be controlled.

    摘要翻译： 本发明公开了一种具有浮动阱式非易失性存储单元的半导体器件及其制造方法。 该方法包括提供具有非易失性存储区域，第一区域和第二区域的半导体衬底。 顺序地形成由半导体衬底上的隧道氧化物层，电荷存储层和第一沉积氧化物层组成的三层。 然后除去非易失性存储区域之外的半导体衬底上的三层。 第二沉积氧化物层形成在半导体衬底的包括去除三层的第一和第二区域的整个表面上。 去除第二区域上的第二沉积氧化物层，并且在包括除去第二沉积氧化物层的第二区域的半导体衬底的整个表面上形成第一热氧化物层。 可以根据本发明制造半导体器件以减少处理时间和降低杂质掺杂分布的变化。 可以控制阻挡氧化物层和高电压栅极氧化物层的厚度。

    Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same
    8.
    发明授权
    Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same 失效
    具有两片门和自对准ONO的本地SONOS型结构及其制造方法

    公开(公告)号：US06815764B2

    公开(公告)日：2004-11-09

    申请号：US10388631

    申请日：2003-03-17

    申请人： Geum-Jong Bae ,  Nae-In Lee ,  Sang Su Kim ,  Ki Chul Kim ,  Jin-Hee Kim ,  In-Wook Cho ,  Sung-Ho Kim ,  Kwang-Wook Koh

    发明人： Geum-Jong Bae ,  Nae-In Lee ,  Sang Su Kim ,  Ki Chul Kim ,  Jin-Hee Kim ,  In-Wook Cho ,  Sung-Ho Kim ,  Kwang-Wook Koh

    IPC分类号： H01L29792

    CPC分类号： H01L29/792 ,  H01L29/7923 ,  Y10S438/954

    摘要： A local SONOS structure having a two-piece gate and a self-aligned ONO structure includes: a substrate; an ONO structure on the substrate; a first gate layer on and aligned with the ONO structure; a gate insulator on the substrate aside the ONO structure; and a second gate layer on the first gate layer and on the gate insulator. The first and second gate layers are electrically connected together. Together, the ONO structure and first and second gate layers define at least a 1-bit local SONOS structure. A corresponding method of manufacture includes: providing a substrate; forming an ONO structure on the substrate; forming a first gate layer on and aligned with the ONO structure; forming a gate insulator on the substrate aside the ONO structure; forming a second gate layer on the first gate layer and on the gate insulator; and electrically connecting the first and second gate layers.

    摘要翻译： 具有两件式门和自对准ONO结构的本地SONOS结构包括：衬底; 基底上的ONO结构; 在ONO结构上并与ONO结构对准的第一栅极层; 衬底上的栅极绝缘体旁边的ONO结构; 以及在第一栅极层上和栅极绝缘体上的第二栅极层。 第一和第二栅极层电连接在一起。 ONO结构和第一和第二栅极层一起定义至少1位本地SONOS结构。 相应的制造方法包括：提供衬底; 在基板上形成ONO结构; 在ONO结构上形成第一栅极层并与其结合; 在衬底上形成栅极绝缘体，除了ONO结构; 在第一栅极层和栅极绝缘体上形成第二栅极层; 并且电连接第一和第二栅极层。

    Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same
    9.
    发明申请
    Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same 失效
    具有浮动阱型非易失性存储单元的半导体器件及其制造方法

    公开(公告)号：US20060208303A1

    公开(公告)日：2006-09-21

    申请号：US11378505

    申请日：2006-03-17

    申请人： Sang-Su Kim ,  Kwang-Wook Koh ,  Geum-Jong Bae ,  Ki-Chul Kim ,  Sung-Ho Kim ,  Jin-Hee Kim ,  In-Wook Cho

    发明人： Sang-Su Kim ,  Kwang-Wook Koh ,  Geum-Jong Bae ,  Ki-Chul Kim ,  Sung-Ho Kim ,  Jin-Hee Kim ,  In-Wook Cho

    IPC分类号： H01L29/76

    CPC分类号： H01L27/11568 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546

    摘要： The present invention discloses a semiconductor device having a floating trap type nonvolatile memory cell and a method for manufacturing the same. The method includes providing a semiconductor substrate having a nonvolatile memory region, a first region, and a second region. A triple layer composed of a tunnel oxide layer, a charge storing layer and a first deposited oxide layer on the semiconductor substrate is formed sequentially. The triple layer on the semiconductor substrate except the nonvolatile memory region is then removed. A second deposited oxide layer is formed on an entire surface of the semiconductor substrate including the first and second regions from which the triple layer is removed. The second deposited oxide layer on the second region is removed, and a first thermal oxide layer is formed on the entire surface of the semiconductor substrate including the second region from which the second deposited oxide layer is removed. The semiconductor device can be manufactured according to the present invention to have a reduced processing time and a reduced change of impurity doping profile. The thickness of a blocking oxide layer and a high voltage gate oxide layer can be controlled.

    摘要翻译： 本发明公开了一种具有浮动阱式非易失性存储单元的半导体器件及其制造方法。 该方法包括提供具有非易失性存储区域，第一区域和第二区域的半导体衬底。 顺序地形成由半导体衬底上的隧道氧化物层，电荷存储层和第一沉积氧化物层组成的三层。 然后除去非易失性存储区域之外的半导体衬底上的三层。 第二沉积氧化物层形成在半导体衬底的包括去除三层的第一和第二区域的整个表面上。 去除第二区域上的第二沉积氧化物层，并且在包括除去第二沉积氧化物层的第二区域的半导体衬底的整个表面上形成第一热氧化物层。 可以根据本发明制造半导体器件以减少处理时间和降低杂质掺杂分布的变化。 可以控制阻挡氧化物层和高电压栅极氧化物层的厚度。

    Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same
    10.
    发明授权
    Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same 失效
    具有两片门和自对准ONO的本地SONOS型结构及其制造方法

    公开(公告)号：US07060563B2

    公开(公告)日：2006-06-13

    申请号：US10953553

    申请日：2004-09-30

    申请人： Geum-Jong Bae ,  Nae-In Lee ,  Sang Su Kim ,  Ki Chul Kim ,  Jin-Hee Kim ,  In-Wook Cho ,  Sung-Ho Kim ,  Kwang-Wook Koh

    发明人： Geum-Jong Bae ,  Nae-In Lee ,  Sang Su Kim ,  Ki Chul Kim ,  Jin-Hee Kim ,  In-Wook Cho ,  Sung-Ho Kim ,  Kwang-Wook Koh

    IPC分类号： H01L21/8247

    CPC分类号： H01L29/792 ,  H01L29/7923 ,  Y10S438/954

    摘要： A local SONOS structure having a two-piece gate and a self-aligned ONO structure includes: a substrate; an ONO structure on the substrate; a first gate layer on and aligned with the ONO structure; a gate insulator on the substrate aside the ONO structure; and a second gate layer on the first gate layer and on the gate insulator. The first and second gate layers are electrically connected together. Together, the ONO structure and first and second gate layers define at least a 1-bit local SONOS structure. A corresponding method of manufacture includes: providing a substrate; forming an ONO structure on the substrate; forming a first gate layer on and aligned with the ONO structure; forming a gate insulator on the substrate aside the ONO structure; forming a second gate layer on the first gate layer and on the gate insulator; and electrically connecting the first and second gate layers.

    摘要翻译： 具有两件式门和自对准ONO结构的本地SONOS结构包括：衬底; 基底上的ONO结构; 在ONO结构上并与ONO结构对准的第一栅极层; 衬底上的栅极绝缘体旁边的ONO结构; 以及在第一栅极层上和栅极绝缘体上的第二栅极层。 第一和第二栅极层电连接在一起。 ONO结构和第一和第二栅极层一起定义至少1位本地SONOS结构。 相应的制造方法包括：提供衬底; 在基板上形成ONO结构; 在ONO结构上形成第一栅极层并与其结合; 在衬底上形成栅极绝缘体，除了ONO结构; 在第一栅极层和栅极绝缘体上形成第二栅极层; 并且电连接第一和第二栅极层。