发明申请
US20070101224A1 Circuit for Generating Data Strobe Signal in DDR Memory Device, and Method Therefor 有权
用于在DDR存储器件中产生数据选通信号的电路及其方法

  • 专利标题: Circuit for Generating Data Strobe Signal in DDR Memory Device, and Method Therefor
  • 专利标题(中): 用于在DDR存储器件中产生数据选通信号的电路及其方法
  • 申请号: US11611922
    申请日: 2006-12-18
  • 公开(公告)号: US20070101224A1
    公开(公告)日: 2007-05-03
  • 发明人: Kwang NaYoung Choi
  • 申请人: Kwang NaYoung Choi
  • 申请人地址: KR Icheon-Shi 467-701
  • 专利权人: HYNIX SEMICONDUCTOR INC.
  • 当前专利权人: HYNIX SEMICONDUCTOR INC.
  • 当前专利权人地址: KR Icheon-Shi 467-701
  • 优先权: KR2004-27097 20040420
  • 主分类号: G01R31/28
  • IPC分类号: G01R31/28
Circuit for Generating Data Strobe Signal in DDR Memory Device, and Method Therefor
摘要:
The present invention discloses a circuit for generating a data strobe signal in a DDR memory device and a method therefor which can precisely distinguish preamble and postamble periods of the data strobe signal by generating pulses for generating the data strobe signal only in a data strobe signal input period by using an internal clock signal according to CAS latency under a read command, and generating the data strobe signal by using the pulses, and which can improve reliability of the circuit operation by precisely controlling operation timing with the internal clock signal.
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