发明申请
- 专利标题： Cross diffusion barrier layer in gate structure
- 专利标题（中）： 栅极结构中的交叉扩散阻挡层
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申请号： US11646896申请日： 2006-12-28
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公开(公告)号： US20070102753A1公开(公告)日： 2007-05-10
- 发明人: Sanh Tang , Chih-Chen Cho , Robert Burke , Anuradha Iyengar , Eugene Gifford
- 申请人： Sanh Tang , Chih-Chen Cho , Robert Burke , Anuradha Iyengar , Eugene Gifford
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/76
摘要：
Various embodiments include a substrate having including a first doped region and a second doped region located on a first side of the substrate, and a third doped region and a fourth doped region located on a second side of the substrate, an insulation layer overlying the substrate, a gate layer overlying the insulation layer, a barrier layer overlying the gate layer, and an electrode layer overlying the barrier layer. The first and third doped regions may be located on a first side of the gate layer. The second and fourth doped regions may be located on a second side of the gate layer. The first and third doped regions may be source and drain regions of a first transistor. The second and fourth doped regions may be source and drain regions of a second transistor. The gate layer may include a gate segment to couple to a third transistor. Other embodiments are disclosed.
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