发明申请
- 专利标题： Radio-frequency switching circuit and semiconductor device
- 专利标题（中）： 射频切换电路和半导体器件
-
申请号： US11591462申请日： 2006-11-02
-
公开(公告)号： US20070103252A1公开(公告)日： 2007-05-10
- 发明人: Tadayoshi Nakatsuka , Atsushi Suwa , Motoo Nakagawa , Masakazu Adachi
- 申请人： Tadayoshi Nakatsuka , Atsushi Suwa , Motoo Nakagawa , Masakazu Adachi
- 优先权： JP2005-321214 20051104
- 主分类号： H01P1/15
- IPC分类号： H01P1/15
摘要：
A common terminal 500 is connected to drains of FETs 101 and 102 via a capacitor 400. FETs 111 to 114 are serially connected, and inserted between a source of the FET 101 and a terminal 501 via a capacitor 401. Similarly, each of: FETs 121 to 124; FETs 131 to 133; FETs 141 to 143; FETs 151 to 153; and FETs 161 to 163 is inserted between the source of the FET 101 or an FET 102 and a corresponding one of terminals 502 to 506. This configuration allows a stray capacitance value of a transmission/reception path to be reduced at the time of transmission/reception, thereby obtaining a favorable radio-frequency characteristic.
公开/授权文献
- US07492238B2 Radio-frequency switching circuit and semiconductor device 公开/授权日：2009-02-17
信息查询
