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    Radio-frequency switching circuit and semiconductor device
    1.
    发明授权
    Radio-frequency switching circuit and semiconductor device 失效
    射频切换电路和半导体器件

    公开(公告)号：US07492238B2

    公开(公告)日：2009-02-17

    申请号：US11591462

    申请日：2006-11-02

    申请人： Tadayoshi Nakatsuka ,  Atsushi Suwa ,  Motoo Nakagawa ,  Masakazu Adachi

    发明人： Tadayoshi Nakatsuka ,  Atsushi Suwa ,  Motoo Nakagawa ,  Masakazu Adachi

    IPC分类号： H01P1/10 ,  H01P1/15 ,  H03H11/34

    CPC分类号： H01P1/15 ,  H03K17/002 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693

    摘要： A common terminal 500 is connected to drains of FETs 101 and 102 via a capacitor 400. FETs 111 to 114 are serially connected, and inserted between a source of the FET 101 and a terminal 501 via a capacitor 401. Similarly, each of: FETs 121 to 124; FETs 131 to 133; FETs 141 to 143; FETs 151 to 153; and FETs 161 to 163 is inserted between the source of the FET 101 or an FET 102 and a corresponding one of terminals 502 to 506. This configuration allows a stray capacitance value of a transmission/reception path to be reduced at the time of transmission/reception, thereby obtaining a favorable radio-frequency characteristic.

    摘要翻译： 公共端子500经由电容器400连接到FET 101和102的漏极.FET 111至114串联连接，并且经由电容器401插入FET 101的源极和端子501之间。类似地，每个FET 121至124; FET 131〜133; FET 141〜143; FET 151〜153; 并且FET161〜163插入在FET101的源极或FET102与端子502〜506中的对应的一个之间。这种结构允许发送/接收路径的杂散电容值减小， 接收，从而获得有利的射频特性。

    Radio-frequency switching circuit and semiconductor device
    2.
    发明申请
    Radio-frequency switching circuit and semiconductor device 失效
    射频切换电路和半导体器件

    公开(公告)号：US20070103252A1

    公开(公告)日：2007-05-10

    申请号：US11591462

    申请日：2006-11-02

    申请人： Tadayoshi Nakatsuka ,  Atsushi Suwa ,  Motoo Nakagawa ,  Masakazu Adachi

    发明人： Tadayoshi Nakatsuka ,  Atsushi Suwa ,  Motoo Nakagawa ,  Masakazu Adachi

    IPC分类号： H01P1/15

    CPC分类号： H01P1/15 ,  H03K17/002 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693

    摘要： A common terminal 500 is connected to drains of FETs 101 and 102 via a capacitor 400. FETs 111 to 114 are serially connected, and inserted between a source of the FET 101 and a terminal 501 via a capacitor 401. Similarly, each of: FETs 121 to 124; FETs 131 to 133; FETs 141 to 143; FETs 151 to 153; and FETs 161 to 163 is inserted between the source of the FET 101 or an FET 102 and a corresponding one of terminals 502 to 506. This configuration allows a stray capacitance value of a transmission/reception path to be reduced at the time of transmission/reception, thereby obtaining a favorable radio-frequency characteristic.

    摘要翻译： 公共端子500经由电容器400连接到FET 101和102的漏极.FET 111至114串联连接，并且经由电容器401插入FET 101的源极和端子501之间。类似地，每个FET 121至124; FET 131〜133; FET 141〜143; FET 151〜153; 并且FET161〜163插入在FET101的源极或FET102与端子502〜506中的对应的一个之间。这种结构允许发送/接收路径的杂散电容值减小， 接收，从而获得有利的射频特性。