发明申请
- 专利标题: METHODS FOR PRODUCING A SEMICONDUCTOR ENTITY
- 专利标题(中): 生产半导体实体的方法
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申请号: US11617025申请日: 2006-12-28
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公开(公告)号: US20070104240A1公开(公告)日: 2007-05-10
- 发明人: Yves Le Vaillant , Olivier Rayssac , Christophe Fernandez
- 申请人: Yves Le Vaillant , Olivier Rayssac , Christophe Fernandez
- 申请人地址: FR Bernin
- 专利权人: S.O.I.Tec Silicon on Insulator Technologies S.A.
- 当前专利权人: S.O.I.Tec Silicon on Insulator Technologies S.A.
- 当前专利权人地址: FR Bernin
- 优先权: FR0402080 20040301
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also provided that includes at least one motif on its surface. The technique further includes bonding the donor substrate at the bonding interface to the at least one motif on the receiver substrate, and supplying sufficient energy to detach a portion of the thin layer from the donor substrate located at the at least one motif and to rupture bonds within the thin layer. The energy thus supplied is insufficient to rupture the bond at the bonding interface. Also described is fabrication of a wafer and the use of the method to produce chips suitable for use in electronics, optics, or optoelectronics applications.
公开/授权文献
- US07439160B2 Methods for producing a semiconductor entity 公开/授权日:2008-10-21