公开(公告)号：US20100181653A1

公开(公告)日：2010-07-22

申请号：US12663254

申请日：2008-06-24

申请人： Cecile Aulnette ,  Khalid Radouane

发明人： Cecile Aulnette ,  Khalid Radouane

IPC分类号： H01L29/02 ,  B32B3/02 ,  H01L21/762 ,  H01L21/306 ,  H01L21/265

CPC分类号： H01L21/76254 ,  H01L21/02032 ,  Y10T428/24488

摘要： The invention relates to a method for recycling a substrate with a step-like residue in a first region of its surface, in particular along the edge of the substrate, which protrudes with respect to the surface of a remaining second region of the substrate, and wherein the first region comprises a modified zone, in particular an ion implanted zone, essentially in a plane corresponding to the plane of the surface of the remaining second region of the substrate and/or chamfered towards the edge of the substrate. To prevent the negative impact of contaminants in subsequent laminated wafer fabricating processes, the recycling method comprises a material removal step which is carried out such that the surface of the substrate in the first region is lying lower than the level of the modified zone before the material removal. The invention also relates to a laminated wafer fabricating method using the recycled substrate and to a recycled substrate in which the surface of a first region lies lower than the surface of the second region.

摘要翻译： 本发明涉及一种用于在其表面的第一区域，特别是沿着衬底的边缘相对于衬底的剩余第二区域的表面突出的阶梯状残留物再循环衬底的方法，以及 其中所述第一区域包括改性区域，特别是离子注入区域，基本上在与衬底的剩余第二区域的表面的平面相对应的平面中和/或朝向衬底的边缘倒角。 为了防止随后的层压晶片制造工艺中的污染物的负面影响，回收方法包括材料去除步骤，其执行为使得第一区域中的基板的表面低于材料之前的改质区域的水平 删除。 本发明还涉及使用再循环基板和第一区域的表面低于第二区域的表面的再循环基板的层压晶片制造方法。

公开(公告)号：US20070148915A1

公开(公告)日：2007-06-28

申请号：US11681349

申请日：2007-03-02

申请人： Olivier Rayssac ,  Fabrice Letertre

发明人： Olivier Rayssac ,  Fabrice Letertre

IPC分类号： H01L21/46

CPC分类号： B28D5/0011 ,  B28D5/0023 ,  B28D5/0052 ,  B28D5/0064 ,  H01L21/2007 ,  H01L21/76254 ,  Y10T83/364 ,  Y10T156/1126 ,  Y10T156/1184 ,  Y10T156/1928 ,  Y10T156/1967 ,  Y10T156/1972

摘要： A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two layers that defines an interface ring about the periphery of the assembly, providing a high-pressure zone at the interface ring, and providing at least one controllable low-pressure zone in the vicinity of at least one of the first surface and the second surface. The technique also includes supplying the high-pressure zone with a controllable high-pressure force, and attacking the interface ring with at least one mechanical force in combination with the high-pressure force to cut the assembly.

摘要翻译： 提出了一种用于切割包括具有第一表面和第二表面的两层材料的组件的方法。 该方法包括在两个层之间提供弱化的界面，其限定围绕组件的周边的界面环，在界面环处提供高压区，并且在至少附近提供至少一个可控制的低压区 第一表面和第二表面之一。 该技术还包括向高压区域供应可控的高压力，并且以至少一个机械力与高压力结合来对接口环进行攻击以切割组件。

公开(公告)号：US20070119893A1

公开(公告)日：2007-05-31

申请号：US11622053

申请日：2007-01-11

申请人： Olivier Rayssac ,  Fabrice Letertre

发明人： Olivier Rayssac ,  Fabrice Letertre

IPC分类号： B26F3/00

CPC分类号： H01L21/76254 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0052 ,  B28D5/0064 ,  H01L21/2007 ,  Y10T29/53274 ,  Y10T83/0267 ,  Y10T83/04 ,  Y10T83/364 ,  Y10T156/1059 ,  Y10T156/1184 ,  Y10T156/1189 ,  Y10T156/1961 ,  Y10T156/1967 ,  Y10T156/1972 ,  Y10T225/10 ,  Y10T225/12 ,  Y10T225/30 ,  Y10T225/307 ,  Y10T225/35 ,  Y10T225/386

摘要： An automatic cutting device is described for cutting an assembly. The assembly includes a material having a weakened zone therein that defines a useful layer and being attached to a source substrate. The cutting device includes a cutting mechanism and a holding and positioning mechanism operatively associated with the cutting mechanism. The holding and positioning mechanism positions the material so that the cutting mechanism detaches the layer from the source substrate along the weakened zone. The cutting device also includes a control mechanism for adjusting at least two different portions of the assembly during detachment of the layer to facilitate a more precise detachment.

摘要翻译： 描述了用于切割组件的自动切割装置。 组件包括其中具有弱化区的材料，其限定有用层并且附接到源基底。 切割装置包括切割机构和与切割机构可操作地相关联的保持和定位机构。 保持定位机构定位材料，使得切割机构沿着弱化区域从源基板分离出层。 切割装置还包括一个控制机构，用于在分离该层期间调节该组件的至少两个不同部分，以便于更精确的拆卸。

公开(公告)号：US07221038B2

公开(公告)日：2007-05-22

申请号：US11057171

申请日：2005-02-15

申请人： André Auberton-Herve

发明人： André Auberton-Herve

IPC分类号： H01L29/06

CPC分类号： H01L21/76254

摘要： Techniques are shown in which substrates having a first layer of a first material and second layer of a second material, wherein the second material is less noble than the first material, is provided by bonding the first and second layers together with an amorphous layer interposed there between. The amorphous material may be deposited on a bonding face of the first layer, second layer, or both, before the operation of bonding the first and second layers. The layer with less noble material may be a supporting layer and the other layer may be an active layer for forming components in optics, electronics, or opto-electronics. The amorphous layer may be polished before the bonding operation.

摘要翻译： 示出了其中具有第一材料的第一层和第二材料的第二层的衬底（其中第二材料比第一材料更不贵）的衬底是通过将第一和第二层与插入其中的非晶层接合而提供的 之间。 在结合第一层和第二层的操作之前，非晶材料可以沉积在第一层，第二层或两者的接合面上。 具有较低贵重材料的层可以是支撑层，另一层可以是用于在光学，电子学或光电子学中形成组件的有源层。 可以在接合操作之前对非晶层进行抛光。

公开(公告)号：US20070104240A1

公开(公告)日：2007-05-10

申请号：US11617025

申请日：2006-12-28

申请人： Yves Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

发明人： Yves Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

IPC分类号： H01S5/00

CPC分类号： H01L21/76254 ,  H01L2221/68318

摘要： A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also provided that includes at least one motif on its surface. The technique further includes bonding the donor substrate at the bonding interface to the at least one motif on the receiver substrate, and supplying sufficient energy to detach a portion of the thin layer from the donor substrate located at the at least one motif and to rupture bonds within the thin layer. The energy thus supplied is insufficient to rupture the bond at the bonding interface. Also described is fabrication of a wafer and the use of the method to produce chips suitable for use in electronics, optics, or optoelectronics applications.

摘要翻译： 对半导体实体的制造方法进行说明。 该方法包括提供具有预定深度的弱区的施主衬底以限定薄层，并且施主衬底包括结合界面。 还提供了在其表面上包括至少一个图案的接收器衬底。 该技术还包括将接合界面处的施主衬底粘合到接收器基底上的至少一个基序上，并且提供足够的能量以将薄层的一部分从位于至少一个基序上的施主衬底分离出来，并断裂键 在薄层内。 这样提供的能量不足以破坏接合界面处的结合。 还描述了晶片的制造和使用该方法来生产适用于电子，光学或光电子应用的芯片。

公开(公告)号：US07187162B2

公开(公告)日：2007-03-06

申请号：US10733470

申请日：2003-12-12

申请人： Sebastien Kerdiles ,  Yves-Mathieu Le Vaillant

发明人： Sebastien Kerdiles ,  Yves-Mathieu Le Vaillant

IPC分类号： G01R31/28

CPC分类号： H01L21/68707 ,  G01N19/04 ,  H01L21/67092 ,  Y10S156/943 ,  Y10T29/53683 ,  Y10T83/0267 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1978 ,  Y10T156/1983

摘要： A tool for disuniting two wafers, at least one of which is for use in fabricating substrates for microelectronics, optoelectronics, or optics, the tool comprising two gripper members suitable for being fixed temporarily to respective opposite faces of the two wafers that are united with each other, and a disuniting control device suitable for moving said members relative to each other. The tool is remarkable in that the disuniting control device comprises an actuator for positively displacing said gripper members and for inducing controlled flexing in at least one of said members. This makes it easier to disunite the wafers while reducing the risk of damaging them. The invention is applicable to disuniting wafers that have been weakened by implantation, that have been temporarily bonded together, etc.

摘要翻译： 用于分离两个晶片的工具，其中至少一个用于制造用于微电子学，光电子学或光学器件的衬底，该工具包括两个夹持器构件，其适于临时固定在两个晶片的相应的相对面上 以及适于相对于彼此移动所述构件的分离控制装置。 该工具是显着的，因为分离控制装置包括用于使所述夹持构件正向移动并用于在至少一个所述构件中引起受控弯曲的致动器。 这使得更容易使晶片脱粒，同时降低了损坏晶片的风险。 本发明适用于已经被临时粘合在一起的通过植入而被削弱的晶片的分离等。

公开(公告)号：US07182234B2

公开(公告)日：2007-02-27

申请号：US10883435

申请日：2004-07-01

申请人： Olivier Rayssac ,  Fabrice Letertre

发明人： Olivier Rayssac ,  Fabrice Letertre

IPC分类号： B26F3/00

CPC分类号： H01L21/76254 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0052 ,  B28D5/0064 ,  H01L21/2007 ,  Y10T29/53274 ,  Y10T83/0267 ,  Y10T83/04 ,  Y10T83/364 ,  Y10T156/1059 ,  Y10T156/1184 ,  Y10T156/1189 ,  Y10T156/1961 ,  Y10T156/1967 ,  Y10T156/1972 ,  Y10T225/10 ,  Y10T225/12 ,  Y10T225/30 ,  Y10T225/307 ,  Y10T225/35 ,  Y10T225/386

摘要： An automatic cutting device is described for cutting an assembly. The assembly includes a material having a weakened zone therein that defines a useful layer and being attached to a source substrate. The cutting device includes a cutting mechanism and a holding and positioning mechanism operatively associated with the cutting mechanism. The holding and positioning mechanism positions the material so that the cutting mechanism detaches the layer from the source substrate along the weakened zone. The cutting device also includes a control mechanism for adjusting at least two different portions of the assembly during detachment of the layer to facilitate a more precise detachment.

摘要翻译： 描述了用于切割组件的自动切割装置。 组件包括其中具有弱化区的材料，其限定有用层并且附接到源基底。 切割装置包括切割机构和与切割机构可操作地相关联的保持和定位机构。 保持定位机构定位材料，使得切割机构沿着弱化区域从源基板分离出层。 该切割装置还包括一个控制机构，用于在分离该层期间调节组件的至少两个不同部分，以便于更精确的拆卸。

公开(公告)号：US07169683B2

公开(公告)日：2007-01-30

申请号：US10686082

申请日：2003-10-14

申请人： Bruno Ghyselen ,  Olivier Rayssac

发明人： Bruno Ghyselen ,  Olivier Rayssac

IPC分类号： H01L21/48

CPC分类号： H01L21/76259 ,  H01L21/76254

摘要： A preventive treatment method for a multilayer semiconductor structure having a support substrate, at least one intermediate layer and a surface layer in which the surface layer is to be subjected to a subsequent chemical treatment. The method includes forming a protective layer between the intermediate layer and the surface layer. The protective layer is made from a material chosen to be sufficiently resistant to the chemical treatment to protect the intermediate layer from chemical attack.

摘要翻译： 一种多层半导体结构的预防处理方法，其具有支撑基板，至少一个中间层和表面层，其中表面层将进行后续的化学处理。 该方法包括在中间层和表面层之间形成保护层。 保护层由选择为具有足够抗化学处理的材料制成，以保护中间层免受化学侵蚀。

公开(公告)号：US20060216849A1

公开(公告)日：2006-09-28

申请号：US11434930

申请日：2006-05-17

申请人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

发明人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/30

CPC分类号： H01L21/187 ,  B81C1/00365 ,  B81C2201/0191 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76254

摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

公开(公告)号：US07098148B2

公开(公告)日：2006-08-29

申请号：US10863352

申请日：2004-06-09

申请人： Walter Schwarzenbach ,  Jean-Marc Waechter

发明人： Walter Schwarzenbach ,  Jean-Marc Waechter

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/30 ,  H01L21/46 ,  H01L21/332

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/324

摘要： A method for heat treatment of a semiconductor wafer placed on a support. The method includes subjecting the wafer to a heat treatment with a slow temperature rise from an initial temperature to a treatment ending temperature, and minimizing slip lines that would otherwise result in the wafer from the heat treatment by introducing at least one temperature plateau of constant temperature and of predetermined duration in the heat treatment before reaching the treatment ending temperature. The method reduces the temperature gradients on the wafer to minimize slip lines in the wafer resulting from the heat treatment.

摘要翻译： 一种用于热处理放置在支撑体上的半导体晶片的方法。 该方法包括使晶片经历从初始温度到处理结束温度的缓慢温度升高的热处理，并且最小化滑移线，否则将导致晶片从热处理引入至少一个恒定温度的平台 并且在达到治疗结束温度之前的热处理中具有预定的持续时间。 该方法降低晶片上的温度梯度以最小化由热处理产生的晶片的滑移线。