发明申请
- 专利标题： Semiconductor device and fabrication method therefor
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US11513693申请日： 2006-08-30
-
公开(公告)号： US20070105308A1公开(公告)日： 2007-05-10
- 发明人: Masaya Hosaka , Masatomi Okanishi
- 申请人： Masaya Hosaka , Masatomi Okanishi
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/788
摘要：
The present invention provides semiconductor device and a fabrication method therefor. The semiconductor device includes trenches (11) formed in a semiconductor substrate (10), first ONO films (18) provided on both side surfaces of the trenches, and first word lines (22) provided on side surfaces of the first ONO films (18) and running in a length direction of the trenches (11). According to the present invention, it is possible to provide a semiconductor deice and a fabrication method therefor, in which higher memory capacity can be achieved.
公开/授权文献
- US07589371B2 Semiconductor device and fabrication method therefor 公开/授权日：2009-09-15
信息查询
IPC分类:
