发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US11420148申请日： 2006-05-24
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公开(公告)号： US20070108518A1公开(公告)日： 2007-05-17
- 发明人: Koichi ENDO , Kumiko SATO , Kiminori WATANABE , Norio YASUHARA , Tomoko MATSUDAI , Yusuke KAWAGUCHI
- 申请人： Koichi ENDO , Kumiko SATO , Kiminori WATANABE , Norio YASUHARA , Tomoko MATSUDAI , Yusuke KAWAGUCHI
- 申请人地址： JP Minato-ku 105-8001
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku 105-8001
- 优先权： JP2005-331742 20051116
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A gate electrode is formed on a gate insulator above a semiconductor substrate. Diffused regions are formed in a surface of the semiconductor substrate as sandwiching the gate electrode therebetween. A high-resistance layer is formed in the surface of the semiconductor substrate as electrically connected to the diffused region. A low-resistance layer is formed in the surface of the semiconductor substrate as electrically connected to the high-resistance layer. A drain electrode is connected to the low-resistance layer.
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