发明申请
- 专利标题： ROTATIONAL SHEAR STRESS FOR CHARGE CARRIER MOBILITY MODIFICATION
- 专利标题（中）： 充电移动机动车修改的旋转剪应力
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申请号： US11164179申请日： 2005-11-14
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公开(公告)号： US20070108531A1公开(公告)日： 2007-05-17
- 发明人: Dureseti Chidambarrao
- 申请人： Dureseti Chidambarrao
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor structure and its method of fabrication utilize a semiconductor substrate having an active region mesa surrounded by an isolation trench. A first isolation region having a first stress is located in the isolation trench. A second isolation region having a second stress different than the first stress is also located in the isolation trench. The first isolation region and the second isolation region are sized and positioned to rotationally shear stress the active region mesa.