发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11650935申请日： 2007-01-09
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公开(公告)号： US20070108618A1公开(公告)日： 2007-05-17
- 发明人: Masahiko Hasunuma , Sachiyo Ito
- 申请人： Masahiko Hasunuma , Sachiyo Ito
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 优先权： JP2002-257974 20020903
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L23/48
摘要：
A semiconductor device is disclosed, which includes at least two layers superposed on each other in a stacking direction above a substrate, each of the layers including an insulating film a conductive layer films, a conductive plug electrically connected to the conductive layer, and at least one dummy via chain provided in the insulating films and stacked in the at least two layers, wherein the dummy via chain includes at least two reinforcing metal layers and at least one reinforcing plug.
公开/授权文献
- US07301240B2 Semiconductor device 公开/授权日：2007-11-27
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