专利检索 ap:"Masahiko Hasunuma" 第 1 页

1.

发明申请
SEMICONDUCTOR DEVICE HAVING OXIDIZED METAL FILM AND MANUFACTURE METHOD OF THE SAME 审中-公开
标题翻译：具有氧化金属膜的半导体器件及其制造方法

公开(公告)号：US20120152168A1

公开(公告)日：2012-06-21

申请号：US13407802

申请日：2012-02-29

申请人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma

发明人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma

IPC分类号： C23C16/46 , C23C16/511

CPC分类号： H01L21/31616 , C23C16/045 , C23C16/45536 , C23C16/482 , H01L21/02178 , H01L21/02186 , H01L21/02244 , H01L21/02255 , H01L21/28556 , H01L21/28562 , H01L21/67109 , H01L21/67748 , H01L21/6831 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/76807 , H01L21/76814 , H01L21/76828 , H01L21/76831 , H01L21/76835 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

2.

发明授权
Semiconductor device having oxidized metal film and manufacture method of the same 有权
标题翻译：具有氧化金属膜的半导体器件及其制造方法

公开(公告)号：US07791202B2

公开(公告)日：2010-09-07

申请号：US12010371

申请日：2008-01-24

申请人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma

发明人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma

IPC分类号： H01L23/48 , H01L23/52 , H01L29/40

CPC分类号： H01L21/31616 , C23C16/045 , C23C16/45536 , C23C16/482 , H01L21/02178 , H01L21/02186 , H01L21/02244 , H01L21/02255 , H01L21/28556 , H01L21/28562 , H01L21/67109 , H01L21/67748 , H01L21/6831 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/76807 , H01L21/76814 , H01L21/76828 , H01L21/76831 , H01L21/76835 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

3.

发明申请
Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法

公开(公告)号：US20080237863A1

公开(公告)日：2008-10-02

申请号：US12081818

申请日：2008-04-22

申请人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai

发明人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai

IPC分类号： H01L23/49

CPC分类号： H01L21/76846 , H01L21/76834 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L21/76888 , H01L22/32 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05082 , H01L2224/05083 , H01L2224/05093 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05546 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05567 , H01L2224/05605 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/0562 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45116 , H01L2224/4512 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48505 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48799 , H01L2224/48805 , H01L2224/48811 , H01L2224/48813 , H01L2224/48816 , H01L2224/4882 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85375 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/00014 , H01L2924/04941 , H01L2224/05609 , H01L2924/00 , H01L2224/48744 , H01L2224/48713 , H01L2224/48705 , H01L2224/4872 , H01L2224/48605 , H01L2224/48613 , H01L2224/4862 , H01L2924/00015

摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。

4.

发明申请
Semiconductor device having oxidized metal film and manufacture method of the same 有权
标题翻译：具有氧化金属膜的半导体器件及其制造方法

公开(公告)号：US20080122102A1

公开(公告)日：2008-05-29

申请号：US12010371

申请日：2008-01-24

申请人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma

发明人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma

IPC分类号： H01L23/48

CPC分类号： H01L21/31616 , C23C16/045 , C23C16/45536 , C23C16/482 , H01L21/02178 , H01L21/02186 , H01L21/02244 , H01L21/02255 , H01L21/28556 , H01L21/28562 , H01L21/67109 , H01L21/67748 , H01L21/6831 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/76807 , H01L21/76814 , H01L21/76828 , H01L21/76831 , H01L21/76835 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

5.

发明申请
PIEZOELECTRIC THIN FILM DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权

公开(公告)号：US20080074005A1

公开(公告)日：2008-03-27

申请号：US11946913

申请日：2007-11-29

申请人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata

发明人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata

IPC分类号： H01L41/047

CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155

摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

6.

发明申请
Stress analysis method, wiring structure design method, program, and semiconductor device production method 有权
标题翻译：应力分析方法，接线结构设计方法，程序和半导体器件的制造方法

公开(公告)号：US20070204243A1

公开(公告)日：2007-08-30

申请号：US11703218

申请日：2007-02-07

申请人： Sachiyo Ito , Masahiko Hasunuma , Hisashi Kaneko

发明人： Sachiyo Ito , Masahiko Hasunuma , Hisashi Kaneko

IPC分类号： G06F17/50 , G06F17/10 , G06F19/00 , G01L19/00

CPC分类号： G06F17/5018 , G06F17/5068 , G06F2217/80 , H01L2924/0002 , H01L2924/00

摘要： A stress analysis method is provided: including dividing, by using a division unit, an inside of a chip into a plurality of analysis areas, deriving, by using a composite property derivation unit, a composite property into which physical property values of a plurality of materials included in an analysis area are compounded, about each of the plurality of analysis areas on the basis of wiring structure data for each of the plurality of analysis areas, and creating, by using a stress analysis unit, a three-dimensional model of a finite element method which uses each analysis area as an element, to apply the composite property to each element, and to perform a stress analysis.

摘要翻译： 提供一种应力分析方法，包括：通过使用分割单元将芯片的内部划分为多个分析区域，通过使用复合特性导出单元导出多个分析区域的物理属性值的复合特性基于多个分析区域中的每一个的布线结构数据，分析包括在分析区域中的材料，并且基于多个分析区域中的每一个，分别对每个分析区域进行复合，并且通过使用应力分析单元来创建三维模型使用每个分析区域作为元素的有限元法，将复合属性应用于每个元素，并进行应力分析。

7.

发明授权
Semiconductor device 失效
标题翻译：半导体器件

公开(公告)号：US07067922B2

公开(公告)日：2006-06-27

申请号：US10809418

申请日：2004-03-26

申请人： Masahiko Hasunuma , Akitsugu Hatazaki

发明人： Masahiko Hasunuma , Akitsugu Hatazaki

IPC分类号： H01L23/48

CPC分类号： H01L23/3185 , H01L21/78 , H01L23/5329 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00

摘要： Disclosed is a semiconductor device including: a semiconductor substrate; at least one layer of a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less, an entire layer of the first insulating film being separated at least near four corners of the semiconductor substrate by a lacking portion that extends along the four corners; and a second insulating film covering a side face of the entire layer of the first insulating film in the lacking portion on a center side of the semiconductor substrate and having a relative dielectric constant of over 3.8.

摘要翻译： 公开了一种半导体器件，包括：半导体衬底; 至少一层第一绝缘膜，形成在所述半导体衬底之上并具有3.8或更小的相对介电常数，所述第一绝缘膜的整个层被所述半导体衬底的至少四个角分离，所述缺陷部分延伸沿四角; 以及第二绝缘膜，其覆盖半导体衬底的中心侧的缺损部分中的第一绝缘膜的整个层的侧面，并且具有超过3.8的相对介电常数。

8.

发明授权
Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法

公开(公告)号：US06946387B2

公开(公告)日：2005-09-20

申请号：US10650974

申请日：2003-08-29

申请人： Junichi Wada , Atsuko Sakata , Tomio Katata , Takamasa Usui , Masahiko Hasunuma , Hideki Shibata , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura

发明人： Junichi Wada , Atsuko Sakata , Tomio Katata , Takamasa Usui , Masahiko Hasunuma , Hideki Shibata , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura

IPC分类号： H01L21/285 , H01L21/768 , H01L21/4763

CPC分类号： H01L21/76867 , H01L21/2855 , H01L21/76802 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76859 , H01L21/76864 , H01L21/76877 , H01L21/76879 , H01L21/76886 , H01L21/76889

摘要： A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有布线层的Si衬底上形成绝缘膜，形成与布线层连接的接触孔和绝缘膜中的布线槽，用Si 膜，依次在基板上形成Al膜和Ti膜，进行热处理，从而将Al膜替代为Ti膜，并使Si膜被Ti膜吸收，由此填充接触孔和Al膜的布线槽，除去由Ti膜和多余Ti吸收Si膜形成的由Ti硅化物构成的Ti / Ti硅化物，由此用Al塞填充接触孔，并填充布线槽与Al接线。