发明申请
US20070109872A1 SINGLE-POLY NON-VOLATILE MEMORY DEVICE AND ITS OPERATION METHOD
审中-公开
单波非易失性存储器件及其操作方法
- 专利标题: SINGLE-POLY NON-VOLATILE MEMORY DEVICE AND ITS OPERATION METHOD
- 专利标题(中): 单波非易失性存储器件及其操作方法
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申请号: US11380662申请日: 2006-04-28
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公开(公告)号: US20070109872A1公开(公告)日: 2007-05-17
- 发明人: Chrong-Jung Lin , Hsin-Ming Chen , Shih-Jye Shen , Ya-Chin King , Ching-Hsiang Hsu
- 申请人: Chrong-Jung Lin , Hsin-Ming Chen , Shih-Jye Shen , Ya-Chin King , Ching-Hsiang Hsu
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A single-poly, P-channel non-volatile memory cell that is fully compatible with nano-scale semiconductor manufacturing process is provided. The single-poly, P-channel non-volatile memory cell includes an N well, a gate formed on the N well, a gate dielectric layer between the gate and the N well, an ONO layer on sidewalls of the gate, a P+ source doping region and a P+ drain doping region. The ONO layer includes a first oxide layer deposited on the sidewalls of the gate and extends to the N well, and a silicon nitride layer formed on the first oxide layer. The silicon nitride layer functions as a charge-trapping layer.