发明申请
- 专利标题： Methods for manufacturing semiconductor devices
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11594726申请日： 2006-11-09
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公开(公告)号： US20070111433A1公开(公告)日： 2007-05-17
- 发明人: Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Yukiteru Matsui , Takeshi Nishioka , Hiroyuki Yano
- 申请人： Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Yukiteru Matsui , Takeshi Nishioka , Hiroyuki Yano
- 优先权： JPP2005-327899 20051111
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.
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