- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US11651512申请日： 2007-01-10
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公开(公告)号： US20070114590A1公开(公告)日： 2007-05-24
- 发明人: Takashi Ando , Jiro Miura , Yukinobu Hirosaka , Akio Itoh , Junichi Watanabe , Kenkichi Suezawa
- 申请人： Takashi Ando , Jiro Miura , Yukinobu Hirosaka , Akio Itoh , Junichi Watanabe , Kenkichi Suezawa
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2002-74566 20020318; JP2002-249448 20020828; JP2003-64601 20030311
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
There are contained first and second conductive plugs formed in first insulating layer, an island-like oxygen-barrier metal layer for covering the first conductive plug, an oxidation-preventing insulating layer formed on the first insulating layer to cover side surfaces of the oxygen-barrier metal layer, a capacitor having a lower electrode formed on the oxygen-barrier metal layer and the oxidation-preventing insulating layer, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, a second insulating layer for covering the capacitor and the oxidation-preventing insulating layer, a third hole formed in respective layers from the second insulating layer to the oxidation-preventing insulating layer on the second conductive plug, and a third conductive plug formed in the third hole and connected to the second conductive plug.
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