公开(公告)号：US07678646B2

公开(公告)日：2010-03-16

申请号：US11326187

申请日：2006-01-06

申请人： Akio Itoh ,  Naoya Sashida

发明人： Akio Itoh ,  Naoya Sashida

IPC分类号： H01L21/8242 ,  H01L21/8238

CPC分类号： H01L27/11507 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/7684 ,  H01L23/544 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11509 ,  H01L28/57 ,  H01L28/65 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide a semiconductor device capable of improving accuracy in finishing a hole in which a conductive plug right under a capacitor, and a manufacturing method of such a semiconductor device comprising the following steps: a step of forming first and second conductive plugs 32a, 32b in first and second holes 11a, 11b in a first insulating film 11; a step of forming a first opening 14a in an oxidation preventing insulating film 14; a step of forming an auxiliary conductive plug 36a in the first opening 14a; a step of forming a capacitor Q on the auxiliary conductive plug 36a; a step of forming third and fourth holes 41a, 41b in a second insulating film 41 covering the capacitor Q; a step of forming the second opening 14b in the oxidation preventing insulating film 14 under the fourth hole 41b; a step of forming a third conductive plug 47a in the third hole 41a; and a step of forming a fourth conductive plug 47b in the third hole 41a.

摘要翻译： 为了提供能够提高电容器正下方的导电插塞的精加工精度的半导体装置以及这种半导体装置的制造方法，包括以下步骤：将第一和第二导电塞32a，32b形成在第 第一绝缘膜11中的第一和第二孔11a，11b; 在防氧化绝缘膜14中形成第一开口14a的步骤; 在第一开口14a中形成辅助导电塞36a的步骤; 在辅助导电插塞36a上形成电容器Q的步骤; 在覆盖电容器Q的第二绝缘膜41中形成第三和第四孔41a，41b的步骤; 在第四孔41b的下面的防氧化绝缘膜14中形成第二开口14b的步骤; 在第三孔41a中形成第三导电塞47a的步骤; 以及在第三孔41a中形成第四导电插塞47b的步骤。

公开(公告)号：US07074625B2

公开(公告)日：2006-07-11

申请号：US10947202

申请日：2004-09-23

申请人： Akio Itoh

发明人： Akio Itoh

IPC分类号： H01L21/00

CPC分类号： H01L27/11502 ,  H01L21/02164 ,  H01L21/02197 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02356 ,  H01L21/3105 ,  H01L21/31053 ,  H01L21/31612 ,  H01L27/10894 ,  H01L27/11507 ,  H01L28/40

摘要： There is provided a semiconductor device which is manufactured via steps of forming a capacitor which is obtained by forming in sequence an upper electrode, a dielectric film formed of ferroelectric material or high-dielectric material, and a lower electrode on a semiconductor substrate, then forming an interlayer insulating film on the capacitor, then planarizing a surface of the interlayer insulating film by the CMP polishing, then removing a moisture attached to a surface of the interlayer insulating film or a moisture contained in the interlayer insulating film by applying the plasma annealing using an N2O gas, and then forming a redeposited interlayer film on the interlayer insulating film.

摘要翻译： 提供一种半导体器件，其通过以下步骤制造：形成电容器，该电容器通过依次形成上电极，由铁电材料或高介电材料形成的电介质膜，以及在半导体衬底上形成下电极而形成，然后形成 电容器上的层间绝缘膜，然后通过CMP抛光使层间绝缘膜的表面平坦化，然后通过使用等离子体退火进行等离子体退火，除去附着在层间绝缘膜的表面的水分或层间绝缘膜中含有的水分 N 2 O 2气体，然后在层间绝缘膜上形成再沉积的中间膜。

公开(公告)号：US06710422B2

公开(公告)日：2004-03-23

申请号：US10212092

申请日：2002-08-06

申请人： Yukinobu Hikosaka ,  Akio Itoh ,  Kazuaki Takai ,  Takeyasu Saito

发明人： Yukinobu Hikosaka ,  Akio Itoh ,  Kazuaki Takai ,  Takeyasu Saito

IPC分类号： H01L2972

CPC分类号： H01L27/11509 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76895 ,  H01L27/105 ,  H01L27/11507 ,  H01L28/40

摘要： A semiconductor device having conductive plug for connecting capacitor and conductive pattern, comprises first and second impurity diffusion regions formed in a semiconductor substrate, a first insulating film formed over the semiconductor substrate, a first hole formed in the first insulating film on the first impurity diffusion region, a first conductive plug formed in the first hole and made of a metal film, a second hole formed in the first insulating film on the second impurity diffusion region, a second conductive plug formed in the second hole and made of conductive material that is hard to be oxidized rather than the metal film, and a capacitor that consists of a lower electrode connected to an upper surface of the second conductive plug, a dielectric film, and an upper electrode.

摘要翻译： 一种具有用于连接电容器和导电图案的导电插头的半导体器件，包括形成在半导体衬底中的第一和第二杂质扩散区域，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的第一杂质扩散部分上的第一孔 形成在第一孔中并由金属膜制成的第一导电插塞，形成在第二杂质扩散区域上的第一绝缘膜中的第二孔，形成在第二孔中并由导电材料制成的第二导电插塞， 难以被氧化而不是金属膜，以及电容器，其由连接到第二导电插塞的上表面的下电极，电介质膜和上电极组成。

公开(公告)号：US5812907A

公开(公告)日：1998-09-22

申请号：US659050

申请日：1996-06-03

申请人： Akio Itoh ,  Yoshihiko Suzuki ,  Shokyo Koh ,  Hirohiko Tashiro ,  Akinobu Nishikata

发明人： Akio Itoh ,  Yoshihiko Suzuki ,  Shokyo Koh ,  Hirohiko Tashiro ,  Akinobu Nishikata

IPC分类号： G03G15/00 ,  G03G15/23 ,  H04N1/32 ,  G03G21/00

CPC分类号： G03G15/50 ,  G03G15/231 ,  H04N1/00915 ,  H04N1/32561 ,  G03G2215/00126 ,  G03G2215/00586 ,  H04N1/3248

摘要： An image processing apparatus includes a first processor for outputting first image data and a second processor for outputting second image data different from the first image data. The apparatus also includes a first detector for detecting a processing stage of the first processor and a second detector for detecting a processing condition of the second processing means. The apparatus also includes means for judging whether operations, to interrupt the processing by the first processor and to execute the processing by the second processor, are permitted or inhibited on the basis of a first detection result of the first detector and a second detection result of the second detector.

摘要翻译： 图像处理装置包括用于输出第一图像数据的第一处理器和用于输出与第一图像数据不同的第二图像数据的第二处理器。 该装置还包括用于检测第一处理器的处理级的第一检测器和用于检测第二处理装置的处理状态的第二检测器。 该装置还包括用于基于第一检测器的第一检测结果来判断是否允许或禁止由第一处理器执行中断处理和执行第二处理器的处理的操作的装置，以及第二检测结果 第二个检测器。

公开(公告)号：US5485288A

公开(公告)日：1996-01-16

申请号：US843725

申请日：1992-02-28

申请人： Masafumi Kamei ,  Yoshiyuki Suzuki ,  Shizuo Hasegawa ,  Hiroyuki Ichikawa ,  Yoshihiro Funamizu ,  Akio Itoh ,  Yoshinori Abe

发明人： Masafumi Kamei ,  Yoshiyuki Suzuki ,  Shizuo Hasegawa ,  Hiroyuki Ichikawa ,  Yoshihiro Funamizu ,  Akio Itoh ,  Yoshinori Abe

IPC分类号： H04N1/40 ,  H04N1/405 ,  H04N1/56 ,  G06T5/00 ,  H04N1/409

CPC分类号： H04N1/40093 ,  H04N1/40012

摘要： An image processing apparatus for converting color images into monochromatic pattern images. The image processing apparatus includes: means for detecting the area of a color image; means for converting a color image into a monochromatic pattern image; and control means for varying such image processing in accordance with the result of detection made by the means for detecting the area. When a thin line is detected in a color area, the method of processing is determined based on the width of the detected thin line. For example, when the width of the thin line is smaller than a predetermined value, the area of such thin line may be outputted as a plain image instead of a pattern image so that it may easily be seen or recognized. The contour of a color area may be made conspicuous by combining a plain image and a pattern image.

摘要翻译： 一种用于将彩色图像转换成单色图案图像的图像处理装置。 图像处理装置包括：用于检测彩色图像的区域的装置; 用于将彩色图像转换为单色图案图像的装置; 以及用于根据用于检测该区域的装置进行的检测结果来改变这种图像处理的控制装置。 当在颜色区域中检测到细线时，基于检测到的细线的宽度来确定处理方法。 例如，当细线的宽度小于预定值时，可以将这种细线的面积作为平面图像而不是图案图像输出，以便容易地看到或识别。 可以通过组合平面图像和图案图像来使颜色区域的轮廓变得显眼。

公开(公告)号：US4879510A

公开(公告)日：1989-11-07

申请号：US137462

申请日：1987-12-23

申请人： Akio Itoh

发明人： Akio Itoh

IPC分类号： G01R5/02

CPC分类号： G01R5/02

摘要： An indicator includes an indicating member driving unit, an encoder plate, a rotational position detecting unit, and an indication position control unit. The indicating member driving unit rotates an indicating member mounted on a rotor shaft in accordance with an electrical signal input to cause the indicating member to indicate. The encoder plate rotates in association with the indicating member. The rotational position detecting unit detects an actual indication position of the indicating member on the basis of a rotational amount of the encoder plate. The indication position control unit controls the indication position of the indicating member so that the actual indication position of the indicating member detected by the rotational position detecting unit coincides with an indication position of the indicating member determined in correspondence to the electrical signal input.

摘要翻译： 指示器包括指示构件驱动单元，编码器板，旋转位置检测单元以及指示位置控制单元。 指示构件驱动单元根据电信号输入旋转安装在转子轴上的指示构件，以使指示构件指示。 编码器板与指示构件相关联地旋转。 旋转位置检测单元基于编码器板的旋转量检测指示构件的实际指示位置。 指示位置控制单元控制指示构件的指示位置，使得由旋转位置检测单元检测到的指示构件的实际指示位置与根据电信号输入确定的指示构件的指示位置一致。

公开(公告)号：US20100230299A1

公开(公告)日：2010-09-16

申请号：US12659370

申请日：2010-03-05

申请人： Masakazu Aoki ,  Shinichi Towata ,  Tatsuo Noritake ,  Akio Itoh ,  Kota Washio ,  Mamoru Ishikiriyama

发明人： Masakazu Aoki ,  Shinichi Towata ,  Tatsuo Noritake ,  Akio Itoh ,  Kota Washio ,  Mamoru Ishikiriyama

IPC分类号： B65B3/00 ,  B22D23/00 ,  C22C27/02 ,  C22C30/00

CPC分类号： C22C27/02 ,  C01B3/0031 ,  C22C30/00 ,  C22F1/18 ,  Y02E60/327

摘要： The hydrogen storage alloy has, as a main phase thereof, a bcc structure phase having a composition represented by TixCryVzXw wherein 3/2≦y/x≦3/1, 50≦z≦75 mol %, 0≦w≦5 mol %, and x+y+z+w=100 mol %, and X represents any one or more selected from Al, Si, and Fe. The hydrogen storage device is a device using the alloy. The preparation process of a hydrogen storage alloy includes the steps of: melting/casting raw materials mixed to give the composition represented by TixCryVzXw; heat-treating an ingot obtained in the melting/casting step; and subjecting the heat-treated ingot to a hydrogen storing/releasing treatment at least once to activate the ingot.

摘要翻译： 储氢合金作为主要相，具有由TixCryVzXw表示的组成的bcc结构相，其中3/2＆lt; lE; y / x＆nlE; 3/1，50＆amp; nlE; z＆nlE; 75mol％，0＆nlE; w＆nlE; 5mol％ ，x + y + z + w =​​ 100摩尔％，X表示选自Al，Si，Fe中的任一种以上。 储氢装置是使用该合金的装置。 储氢合金的制备方法包括以下步骤：熔融/浇铸混合的原料以得到由TixCryVzXw代表的组合物; 对在熔融/铸造步骤中获得的锭进行热处理; 并且对经过热处理的锭进行氢储存/释放处理至少一次以活化锭。

公开(公告)号：US07221015B2

公开(公告)日：2007-05-22

申请号：US10388596

申请日：2003-03-17

申请人： Takashi Ando ,  Jiro Miura ,  Yukinobu Hikosaka ,  Akio Itoh ,  Junichi Watanabe ,  Kenkichi Suezawa

发明人： Takashi Ando ,  Jiro Miura ,  Yukinobu Hikosaka ,  Akio Itoh ,  Junichi Watanabe ,  Kenkichi Suezawa

IPC分类号： H01L27/108 ,  H01L29/76

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： There are contained first and second conductive plugs formed in first insulating layer, an island-like oxygen-barrier metal layer for covering the first conductive plug, an oxidation-preventing insulating layer formed on the first insulating layer to cover side surfaces of the oxygen-barrier metal layer, a capacitor having a lower electrode formed on the oxygen-barrier metal layer and the oxidation-preventing insulating layer, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, a second insulating layer for covering the capacitor and the oxidation-preventing insulating layer, a third hole formed in respective layers from the second insulating layer to the oxidation-preventing insulating layer on the second conductive plug, and a third conductive plug formed in the third hole and connected to the second conductive plug.

摘要翻译： 存在形成在第一绝缘层中的第一和第二导电插塞，用于覆盖第一导电插塞的岛状氧阻隔金属层，形成在第一绝缘层上的氧化防止绝缘层，以覆盖氧 - 阻挡金属层，形成在氧阻隔金属层上的下电极的电容器和防氧化绝缘层，形成在下电极上的电介质层和形成在电介质层上的上电极，第二绝缘层， 覆盖电容器和防氧化绝缘层，形成在第二绝缘层到第二导电插塞上的防氧化绝缘层的各层中的第三孔和形成在第三孔中并连接到第三导电插塞的第三导电插塞 第二导电插头。

公开(公告)号：US20070032015A1

公开(公告)日：2007-02-08

申请号：US11326187

申请日：2006-01-06

申请人： Akio Itoh ,  Naoya Sashida

发明人： Akio Itoh ,  Naoya Sashida

IPC分类号： H01L21/8242 ,  H01L21/44

CPC分类号： H01L27/11507 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/7684 ,  H01L23/544 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11509 ,  H01L28/57 ,  H01L28/65 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide a semiconductor device capable of improving accuracy in finishing a hole in which a conductive plug right under a capacitor, and a manufacturing method of such a semiconductor device comprising the following steps: a step of forming first and second conductive plugs 32a, 32b in first and second holes 11a, 11b in a first insulating film 11; a step of forming a first opening 14a in an oxidation preventing insulating film 14; a step of forming an auxiliary conductive plug 36a in the first opening 14a; a step of forming a capacitor Q on the auxiliary conductive plug 36a; a step of forming third and fourth holes 41a, 41b in a second insulating film 41 covering the capacitor Q; a step of forming the second opening 14b in the oxidation preventing insulating film 14 under the fourth hole 41b; a step of forming a third conductive plug 47a in the third hole 41a; and a step of forming a fourth conductive plug 47b in the third hole 41a.

摘要翻译： 为了提供能够提高电容器正下方的导电插塞的精加工精度的半导体装置及其制造方法，包括以下步骤：形成第一和第二导电塞32a，32的步骤 b在第一绝缘膜11中的第一和第二孔11a，11b中; 在防氧化绝缘膜14中形成第一开口14a的步骤; 在第一开口14a中形成辅助导电塞36a的步骤; 在辅助导电塞36a上形成电容器Q的步骤; 在覆盖电容器Q的第二绝缘膜41中形成第三和第四孔41a，41b的步骤; 在第四孔41b的下方的防氧化绝缘膜14中形成第二开口部14b的工序; 在第三孔41a中形成第三导电塞47a的步骤; 以及在第三孔41a中形成第四导电插塞47b的步骤。

公开(公告)号：US07026058B2

公开(公告)日：2006-04-11

申请号：US10623731

申请日：2003-07-22

申请人： Shin-ichi Towata ,  Masakazu Aoki ,  Tatsumi Hioki ,  Akio Itoh ,  Akihiko Koiwai ,  Toshihiro Mouri ,  Katsushi Saito

发明人： Shin-ichi Towata ,  Masakazu Aoki ,  Tatsumi Hioki ,  Akio Itoh ,  Akihiko Koiwai ,  Toshihiro Mouri ,  Katsushi Saito

IPC分类号： B32B15/00 ,  B32B15/01 ,  B32B33/00 ,  C01B3/00 ,  C23C30/00

CPC分类号： B32B15/018 ,  C01B3/0078 ,  C22C14/00 ,  C22C23/00 ,  C22C27/02 ,  H01M8/065 ,  Y02E60/324 ,  Y10T428/12493 ,  Y10T428/12729 ,  Y10T428/12819 ,  Y10T428/12875

摘要： A multilayered hydrogen absorbing body is provided which is formed by laminating at least two types of hydrogen absorbing materials. The degrees of strains cause due to absorption/desorption of hydrogen are different between the hydrogen absorbing materials adjacent to each other.

摘要翻译： 提供了通过层压至少两种类型的吸氢材料形成的多层氢吸收体。 由于氢的吸收/解吸引起的应变程度在彼此相邻的吸氢材料之间是不同的。