发明申请
- 专利标题: Method for forming thin film and film-forming device
- 专利标题(中): 薄膜和成膜装置的形成方法
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申请号: US11585863申请日: 2006-10-25
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公开(公告)号: US20070116881A1公开(公告)日: 2007-05-24
- 发明人: Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
- 申请人: Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 优先权: JP2005-335247(P) 20051121
- 主分类号: B05D1/02
- IPC分类号: B05D1/02 ; H05C1/00 ; B05D1/04 ; B05B5/025
摘要:
It is an object to provide a method for forming a thin film having a uniform thickness so as to follow asperities of a surface of a wafer to be processed and to provide a film-forming device used for the method. The film-forming device includes a treatment chamber for receiving a wafer and isolating the wafer from the air; a solvent-gas-supplying portion for supplying a solvent gas into the treatment chamber; a chuck for rotatably holding the wafer so that the downward-facing surface of the substrate is the surface on which a thin film is formed; a coating-solution-supplying portion for supplying a coating solution as a mist of charged particles toward the surface of the wafer; and a charging portion for charging the wafer with an electrical potential opposite to the charge of the particles.
公开/授权文献
- US07926444B2 Method for forming thin film and film-forming device 公开/授权日:2011-04-19