发明申请
US20070116895A1 N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
有权
N，N'-二环烷基取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料
- 专利标题： N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
- 专利标题（中）： N，N'-二环烷基取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料
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申请号： US11285238申请日： 2005-11-22
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公开(公告)号： US20070116895A1公开(公告)日： 2007-05-24
- 发明人: Deepak Shukla , Diane Freeman , Shelby Nelson , Jeffrey Carey , Wendy Aheam
- 申请人： Deepak Shukla , Diane Freeman , Shelby Nelson , Jeffrey Carey , Wendy Aheam
- 专利权人： Eastman Kodak Company
- 当前专利权人： Eastman Kodak Company
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; B32B27/00 ; H01L29/72 ; H01L51/00 ; H01L51/40
摘要：
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted alicyclic ring system, optionally substituted with electron donating groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
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