VERTICAL TRANSISTOR WITH FIELD REGION STRUCTURE

Invention Application

US20070117328A1 VERTICAL TRANSISTOR WITH FIELD REGION STRUCTURE 审中-公开

Title translation: 具有场地结构的垂直晶体管

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Patent Title: VERTICAL TRANSISTOR WITH FIELD REGION STRUCTURE
Patent Title (中): 具有场地结构的垂直晶体管
Application No.: US11622429

Application Date: 2007-01-11
Publication No.: US20070117328A1

Publication Date: 2007-05-24
Inventor: Chih-Feng Huang , Tuo-Hsin Chien , Jenn-yu Lin , Ta-yung Yang
Applicant: Chih-Feng Huang , Tuo-Hsin Chien , Jenn-yu Lin , Ta-yung Yang
Main IPC: H01L21/336
IPC: H01L21/336 ; H01L29/94

VERTICAL TRANSISTOR WITH FIELD REGION STRUCTURE

Abstract:

A structure of a vertical transistor with field region is provided. The vertical transistor comprises a field-doping region formed in a substrate next to a core region of the vertical transistor By modulating the doping density, length, and geometrical pattern of the field region, and by connecting the field region to respective well of rim core regions of the vertical transistor, the present invention realizes a stable breakdown voltage with short length of the field region. Therefore, the device area and the manufacturing cost can be reduced.

Abstract(Chinese):

提供具有场区域的垂直晶体管的结构。垂直晶体管包括通过调制场区域的掺杂密度，长度和几何图案，并且通过将场区域连接到边缘芯的相应阱，形成在靠近垂直晶体管的芯区域的衬底中的场掺杂区域垂直晶体管的区域，本发明实现了场区域的短长度的稳定的击穿电压。因此，可以减少设备面积和制造成本。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的