发明申请
- 专利标题： Semiconductor Device Having Enhanced Photo Sensitivity and Method for Manufacture Thereof
- 专利标题（中）： 具有增强光敏性的半导体器件及其制造方法
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申请号： US11627883申请日： 2007-01-26
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公开(公告)号： US20070120160A1公开(公告)日： 2007-05-31
- 发明人: Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
- 申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
- 申请人地址： TW Hsin-Chu 300-77
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu 300-77
- 主分类号： H01L31/113
- IPC分类号： H01L31/113
摘要：
Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.
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