发明申请
US20070120211A1 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
有权
具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
- 专利标题： Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
- 专利标题（中）： 具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
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申请号： US11699160申请日： 2007-01-29
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公开(公告)号： US20070120211A1公开(公告)日： 2007-05-31
- 发明人: Zhitao Diao , Yiming Huai , Thierry Valet , Paul Nguyen , Mahendra Pakala
- 申请人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul Nguyen , Mahendra Pakala
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A method and system for providing a magnetic element are described. The method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. The free layer is a simple free layer. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
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