公开(公告)号：US20190148622A9

公开(公告)日：2019-05-16

申请号：US13737897

申请日：2013-01-09

申请人： Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Roger Klas Malmhall ,  Ioan Tudosa ,  Rajiv Yadav Ranjan

发明人： Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Roger Klas Malmhall ,  Ioan Tudosa ,  Rajiv Yadav Ranjan

IPC分类号： H01L43/02

摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

公开(公告)号：US09019758B2

公开(公告)日：2015-04-28

申请号：US13225338

申请日：2011-09-02

申请人： Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yuchen Zhou ,  Roger Klas Malmhall ,  Ioan Tudosa

发明人： Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yuchen Zhou ,  Roger Klas Malmhall ,  Ioan Tudosa

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L43/08

CPC分类号： H01L43/10 ,  B82Y40/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L27/228 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08

摘要： A spin transfer torque magnetic random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer. The magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization having a preferred direction perpendicular to film plane.

摘要翻译： 自旋传递转矩磁随机存取存储器（STTMRAM）元件包括形成在衬底上的复合固定层和形成在固定层上的隧道层和形成在隧道势垒层上的复合自由层。 复合自由层和固定层中的每一个的磁化方向基本上垂直于衬底的平面。 复合层由双层单元的多个重复构成，该双层单元由非磁性绝缘层和厚度调节在使磁化具有与膜平面垂直的优选方向的范围内的磁性层组成。

公开(公告)号：US08830736B2

公开(公告)日：2014-09-09

申请号：US13360553

申请日：2012-01-27

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C11/56

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  Y10S977/933 ,  Y10S977/935

摘要： A method of initializing a magnetic random access memory (MRAM) element that is configured to store a state when electric current flows therethrough is disclosed. The MRAM element includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ and each MTJ further includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ for storing reference bit.

摘要翻译： 公开了一种初始化磁性随机存取存储器（MRAM）元件的方法，该磁性随机存取存储器被配置为在电流流经时存储状态。 MRAM元件包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 FL的磁化方向决定了存储在至少一个MTJ中的数据位，并且每个MTJ还包括具有与膜平面垂直的方向具有磁化的磁参考层（RL），以及磁性固定 层（PL）具有与膜平面垂直的方向的磁化。 在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。 在第二MTJ中，FL，RL和PL的磁化方向相对于彼此平行，用于存储参考位。

公开(公告)号：US08704206B2

公开(公告)日：2014-04-22

申请号：US13356633

申请日：2012-01-23

申请人： Kimihiro Satoh ,  Yiming Huai ,  Jing Zhang

发明人： Kimihiro Satoh ,  Yiming Huai ,  Jing Zhang

IPC分类号： H01L29/06 ,  H01L47/00 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

摘要： The present invention relates to memory devices incorporating therein a novel memory cell architecture which includes an array of selection transistors sharing a common channel and method for making the same. A memory device comprises a semiconductor substrate having a first type conductivity, a plurality of drain regions and a common source region separated by a common plate channel in the substrate, and a selection gate disposed on top of the plate channel with a gate dielectric layer interposed therebetween. The plurality of drain regions and the common source region have a second type conductivity opposite to the first type provided in the substrate.

摘要翻译： 本发明涉及其中结合有新颖的存储单元架构的存储器件，其包括共享公共通道的选择晶体管阵列及其制造方法。 存储器件包括具有第一类型导电性的半导体衬底，多个漏极区域和由衬底中的公共板沟道分开的公共源极区域，以及选择栅极，其设置在板沟道的顶部，栅极介电层插入 之间。 多个漏极区域和公共源极区域具有与设置在衬底中的第一类型相反的第二类型导电性。

公开(公告)号：US08565010B2

公开(公告)日：2013-10-22

申请号：US13099321

申请日：2011-05-02

申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang

发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  G11C11/161 ,  H01L43/02

摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.

摘要翻译： 自旋转矩磁性随机存取存储器（STTMRAM）元件包括形成在基板上的参考层，具有固定的垂直磁性分量。 接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。 间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。 自由层的磁性取向相对于固定层的磁性取向。 固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

公开(公告)号：US08492860B2

公开(公告)日：2013-07-23

申请号：US13289372

申请日：2011-11-04

申请人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

发明人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

IPC分类号： H01L29/82

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10

摘要： A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

摘要翻译： STTMRAM元件包括由非磁性分离层（NMSL）隔开的由第一自由层和第二自由层制成的磁化层，第一和第二自由层各自具有彼此作用的面内磁化 反平行耦合。 在向STTMRAM元件施加电流之前，第一自由层和第二自由层的磁化方向各自在同一平面内，此后，第二自由层的磁化方向基本上标称为平面外，并且 第一自由层开关的磁化方向。 当电流停止到STTMRAM元件时，第二自由层的磁化方向保持在与第一自由层基本相反的方向上。

公开(公告)号：US20130021842A1

公开(公告)日：2013-01-24

申请号：US13360553

申请日：2012-01-27

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： G11C11/16

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  Y10S977/933 ,  Y10S977/935

摘要： A method of initializing a magnetic random access memory (MRAM) element that is configured to store a state when electric current flows therethrough is disclosed. The MRAM element includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. Each MTJ further includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ for storing reference bit.

摘要翻译： 公开了一种初始化磁性随机存取存储器（MRAM）元件的方法，该磁性随机存取存储器被配置为在电流流经时存储状态。 MRAM元件包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 每个MTJ还包括具有垂直于膜平面的方向的磁化的磁参考层（RL）和具有与膜平面垂直的方向的磁化的磁性固定层（PL）。 在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。 在第二MTJ中，FL，RL和PL的磁化方向相对于彼此平行，用于存储参考位。

公开(公告)号：US20130021841A1

公开(公告)日：2013-01-24

申请号：US13360524

申请日：2012-01-27

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： G11C11/16

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  Y10S977/933 ,  Y10S977/935

摘要： A magnetic random access memory (MRAM) element is configured to store a state when electric current flows and includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ. Further, the MTJ includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ.

摘要翻译： 磁性随机存取存储器（MRAM）元件被配置为存储电流流动时的状态，并且包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 FL的磁化方向决定了存储在至少一个MTJ中的数据位。 此外，MTJ包括具有与膜平面垂直的方向的磁化的磁性参考层（RL）和具有与膜平面垂直的方向具有磁化的磁性固定层（PL）。 在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。 FL，RL和PL的磁化方向在第二MTJ中相对于彼此平行。

公开(公告)号：US20120306005A1

公开(公告)日：2012-12-06

申请号：US13136051

申请日：2011-07-21

申请人： Kimihiro Satoh ,  Jing Zhang ,  Yiming Huai

发明人： Kimihiro Satoh ,  Jing Zhang ,  Yiming Huai

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66795 ,  H01L29/7851

摘要： The present invention relates to transistor devices having a trough channel structure through which electrical current flows and methods for making the same. A transistor device having a semiconductor trough structure comprises a semiconductor substrate of a first conductivity type having a top surface; a semiconductor trough protruded from the top surface of the substrate along a first direction and having two top surfaces, two outer lateral surfaces, and an inner surface; a layer of isolation insulator disposed on the substrate and abutting the outer lateral surfaces of the semiconductor trough; a gate dielectric layer lining the inner surface and the top surfaces of the semiconductor trough; and a gate electrode disposed on top of the isolation insulator and extending over and filling the semiconductor trough with the gate dielectric layer interposed therebetween. The gate electrode extends along a second direction not parallel to the first direction provided in the semiconductor trough. Regions of the semiconductor trough not directly beneath the gate electrode have a second conductivity type opposite to the first conductivity type provided in the substrate.

摘要翻译： 本发明涉及具有通过电流流过的槽槽结构的晶体管器件及其制造方法。 具有半导体槽结构的晶体管器件包括具有顶表面的第一导电类型的半导体衬底; 半导体槽沿着第一方向从基板的顶表面突出并具有两个顶表面，两个外侧表面和内表面; 隔离绝缘层，设置在所述基板上并邻接所述半导体槽的外侧表面; 栅极电介质层，衬在半导体槽的内表面和顶表面上; 以及栅电极，其设置在隔离绝缘体的顶部并且延伸并填充半导体槽，栅介电层插入其间。 栅电极沿着不平行于半导体槽中的第一方向的第二方向延伸。 不直接在栅电极下方的半导体槽的区域具有与设置在基板中的第一导电类型相反的第二导电类型。

公开(公告)号：US20120295370A1

公开(公告)日：2012-11-22

申请号：US13238972

申请日：2011-09-21

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： H01L21/02

CPC分类号： G11C11/161 ,  H01L43/12

摘要： A STTMRAM element has a free sub-layer with enhanced internal stiffness. A first free sub-layer is made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, with an amount greater than the amount of B in the first free sub-layer. The STTMRAM element is cooled to a second temperature that is lower than the first temperature and a third free sub-layer is deposited directly on top of the second free layer, with the third free sub-layer being made partially of boron B. The amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.

摘要翻译： STTMRAM元件具有增强的内部刚度的自由子层。 第一自由子层部分地由硼（B）制成，在第一温度下对STTMRAM元件进行退火以降低第一自由子层与阻挡层之间的界面处的B含量，退火引起 第二自由子层形成在第一自由子层的顶部上并且部分地由B制成，其量大于第一自由子层中的B的量。 STTMRAM元件被冷却到低于第一温度的第二温度，第三自由子层直接沉积在第二自由层的顶部上，第三自由子层部分由硼B构成。量 在第三自由层中的B的含量小于第二自由子层中的B的量。