Invention Application
- Patent Title: CONTROLLED PROCESS AND RESULTING DEVICE
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Application No.: US11627920Application Date: 2007-01-26
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Publication No.: US20070122995A1Publication Date: 2007-05-31
- Inventor: FRANCOIS HENLEY , Nathan Cheung
- Applicant: FRANCOIS HENLEY , Nathan Cheung
- Applicant Address: US CA San Jose
- Assignee: Silicon Genesis Corporation
- Current Assignee: Silicon Genesis Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/425
Abstract:
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Public/Granted literature
- US07410887B2 Controlled process and resulting device Public/Granted day:2008-08-12
Information query
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