公开(公告)号：US07470600B2

公开(公告)日：2008-12-30

申请号：US11842104

申请日：2007-08-20

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/67092 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US06582999B2

公开(公告)日：2003-06-24

申请号：US09828082

申请日：2001-04-05

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: H01L21425

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US06528391B1

公开(公告)日：2003-03-04

申请号：US09316493

申请日：1999-05-21

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: H01L2130

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选择的方式将能量粒子（22）通过施主衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定施主衬底 所选深度以上的材料（12）和所选深度处的图案的颗粒。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US06511899B1

公开(公告)日：2003-01-28

申请号：US09306692

申请日：1999-05-06

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: H01L21425

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US06413837B1

公开(公告)日：2002-07-02

申请号：US09316493

申请日：1999-05-21

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: H01L2130

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US6153524A

公开(公告)日：2000-11-28

申请号：US123853

申请日：1998-07-28

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: G21G5/00 ,  B81C1/00 ,  C23C14/48 ,  C23C14/54 ,  C23C14/56 ,  C23C16/00 ,  C23C16/54 ,  H01L21/00 ,  H01L21/02 ,  H01L21/265 ,  H01L27/12 ,  H01L21/302

CPC classification number: H01L21/67167 ,  C23C14/48 ,  C23C14/54 ,  C23C14/56 ,  C23C16/54 ,  H01J37/32412 ,  H01J37/32743 ,  H01L21/67069 ,  H01L21/67092 ,  H01L21/67173 ,  H01L21/67213

Abstract: A cluster tool method using plasma immersion ion implantation chamber. In some embodiments, the cluster tool method also includes a controlled cleaving process chamber, as well as others.

Abstract translation: 使用等离子体浸没离子注入室的集群工具方法。 在一些实施例中，群集工具方法还包括受控的分解处理室以及其它方法。

公开(公告)号：US6013567A

公开(公告)日：2000-01-11

申请号：US305824

申请日：1999-05-05

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US5985742A

公开(公告)日：1999-11-16

申请号：US26015

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US20080057675A1

公开(公告)日：2008-03-06

申请号：US11842104

申请日：2007-08-20

Applicant: Francois Henley ,  Nathan Cheung

Inventor： Francois Henley ,  Nathan Cheung

IPC: H01L21/46

CPC classification number: H01L21/67092 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US20080038901A1

公开(公告)日：2008-02-14

申请号：US11841970

申请日：2007-08-20

Applicant: Francois Henley ,  Nathan Cheung

Inventor： Francois Henley ,  Nathan Cheung

IPC: H01L21/30

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  H01L21/2007

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体衬底的选定区域，以在所选择的深度（20）处引发衬底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，以使剩余的所述供体材料释放 部分供体基质。