Dielectric interface for group III-V semiconductor device

Invention Application

US20070123003A1 Dielectric interface for group III-V semiconductor device 有权

Title translation: III-V族半导体器件的介质界面

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Patent Title: Dielectric interface for group III-V semiconductor device
Patent Title (中): III-V族半导体器件的介质界面
Application No.: US11292399

Application Date: 2005-11-30
Publication No.: US20070123003A1

Publication Date: 2007-05-31
Inventor: Justin Brask , Suman Datta , Mark Doczy , James Blackwell , Matthew Metz , Jack Kavalieros , Robert Chau
Applicant: Justin Brask , Suman Datta , Mark Doczy , James Blackwell , Matthew Metz , Jack Kavalieros , Robert Chau
Main IPC: H01L21/20
IPC: H01L21/20 ; H01L21/36

Dielectric interface for group III-V semiconductor device

Abstract:

A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.

Abstract(Chinese):

描述了III-V族半导体器件及其制造方法。高k电介质通过硫族化物区域连接到约束区域。

Public/Granted literature

US07485503B2 Dielectric interface for group III-V semiconductor device Public/Granted day:2009-02-03

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/20	....半导体材料在基片上的沉积，例如外延生长