发明申请
US20070123059A1 Methods of internal stress reduction in dielectric films with chemical incorporation and structures formed thereby
审中-公开
具有化学结合的介电膜内部应力降低的方法及由此形成的结构
- 专利标题： Methods of internal stress reduction in dielectric films with chemical incorporation and structures formed thereby
- 专利标题（中）： 具有化学结合的介电膜内部应力降低的方法及由此形成的结构
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申请号： US11290409申请日： 2005-11-29
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公开(公告)号： US20070123059A1公开(公告)日： 2007-05-31
- 发明人: Michael Haverty , Grant Kloster , Sadasivan Shankar , Boyan Boyanov , Michael Goodner , Mansour Moinpour
- 申请人： Michael Haverty , Grant Kloster , Sadasivan Shankar , Boyan Boyanov , Michael Goodner , Mansour Moinpour
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a porous dielectric layer comprising at least one active end group, and bonding at least one large atomic radii species to replace the at least one active end group, wherein a local swelling may be formed within a portion of the porous dielectric.
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