Invention Application
US20070126043A1 Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same
有权
具有金属 - 绝缘体 - 金属结构的存储节点，包括具有金属 - 绝缘体 - 金属结构的存储节点的非易失性存储器件及其操作方法
- Patent Title: Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same
- Patent Title (中): 具有金属 - 绝缘体 - 金属结构的存储节点，包括具有金属 - 绝缘体 - 金属结构的存储节点的非易失性存储器件及其操作方法
-
Application No.: US11606889Application Date: 2006-12-01
-
Publication No.: US20070126043A1Publication Date: 2007-06-07
- Inventor: Chang-wook Moon , Sang-mock Lee , In-kyeong Yoo , Seung-woon Lee , El Bourim , Eun-hong Lee , Choong-rae Cho
- Applicant: Chang-wook Moon , Sang-mock Lee , In-kyeong Yoo , Seung-woon Lee , El Bourim , Eun-hong Lee , Choong-rae Cho
- Assignee: Samsung Electronics Co. Ltd.
- Current Assignee: Samsung Electronics Co. Ltd.
- Priority: KR10-2005-0117225 20051202
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.
Public/Granted literature
Information query
IPC分类:
