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    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
    6.
    发明授权
    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same 有权
    包括缺氧金属氧化物层的非易失性存储器件及其制造方法

    公开(公告)号：US07842991B2

    公开(公告)日：2010-11-30

    申请号：US11798703

    申请日：2007-05-16

    申请人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    发明人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    IPC分类号： H01L27/108

    CPC分类号： H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

    摘要： A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

    摘要翻译： 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。

    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
    7.
    发明申请
    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same 有权
    包括缺氧金属氧化物层的非易失性存储器件及其制造方法

    公开(公告)号：US20110059576A1

    公开(公告)日：2011-03-10

    申请号：US12926042

    申请日：2010-10-22

    申请人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    发明人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    IPC分类号： H01L21/02

    CPC分类号： H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

    摘要： A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

    摘要翻译： 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。

    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
    8.
    发明申请
    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same 有权
    包括缺氧金属氧化物层的非易失性存储器件及其制造方法

    公开(公告)号：US20070267675A1

    公开(公告)日：2007-11-22

    申请号：US11798703

    申请日：2007-05-16

    申请人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    发明人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    IPC分类号： H01L29/94 ,  H01L21/8242

    CPC分类号： H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

    摘要： A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

    摘要翻译： 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。

    Transistor including physical property-changing layer, method of operating transistor, and method of manufacturing transistor
    10.
    发明申请
    Transistor including physical property-changing layer, method of operating transistor, and method of manufacturing transistor 审中-公开
    包括物理变化层的晶体管，晶体管的操作方法和制造晶体管的方法

    公开(公告)号：US20060197082A1

    公开(公告)日：2006-09-07

    申请号：US11363235

    申请日：2006-02-28

    申请人： Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

    发明人： Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

    IPC分类号： H01L29/18

    CPC分类号： H01L29/7869 ,  H01L29/78681 ,  H01L49/003

    摘要： A transistor using a physical property-changing layer, a method of operating the transistor, and a method of manufacturing the transistor are provided. The transistor may include an insulation layer formed on a substrate, the first and second conductive layer patterns, the physical property-changing layer, a dielectric layer, for example, a high dielectric layer, and a gate electrode. The first and second conductive layer patterns may be spaced apart from each other on the insulation layer. The physical property-changing layer may be formed on a portion of the insulation layer between the first and second conductive layer patterns. The dielectric layer may be stacked on the physical property-changing layer and the gate electrode may be formed on the high dielectric layer.

    摘要翻译： 提供了使用物理性质改变层的晶体管，晶体管的操作方法和晶体管的制造方法。 晶体管可以包括形成在衬底上的绝缘层，第一和第二导电层图案，物理性质改变层，介电层，例如高电介质层和栅电极。 第一和第二导电层图案可以在绝缘层上彼此间隔开。 物理变化层可以形成在第一和第二导电层图案之间的绝缘层的一部分上。 电介质层可以堆叠在物理变化层上，并且栅电极可以形成在高电介质层上。