发明申请
US20070126043A1 Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same
有权
具有金属 - 绝缘体 - 金属结构的存储节点，包括具有金属 - 绝缘体 - 金属结构的存储节点的非易失性存储器件及其操作方法
- 专利标题： Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same
- 专利标题（中）： 具有金属 - 绝缘体 - 金属结构的存储节点，包括具有金属 - 绝缘体 - 金属结构的存储节点的非易失性存储器件及其操作方法
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申请号： US11606889申请日： 2006-12-01
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公开(公告)号： US20070126043A1公开(公告)日： 2007-06-07
- 发明人: Chang-wook Moon , Sang-mock Lee , In-kyeong Yoo , Seung-woon Lee , El Bourim , Eun-hong Lee , Choong-rae Cho
- 申请人： Chang-wook Moon , Sang-mock Lee , In-kyeong Yoo , Seung-woon Lee , El Bourim , Eun-hong Lee , Choong-rae Cho
- 专利权人： Samsung Electronics Co. Ltd.
- 当前专利权人： Samsung Electronics Co. Ltd.
- 优先权： KR10-2005-0117225 20051202
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.