发明申请
- 专利标题： GROUP III NITRIDE CRYSTAL AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 第III组氮化物晶体及其制造方法
-
申请号： US11561662申请日： 2006-11-20
-
公开(公告)号： US20070128746A1公开(公告)日： 2007-06-07
- 发明人: Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
- 申请人： Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
- 优先权： JP2005-335684 20051121
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/22
摘要：
A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.
公开/授权文献
- US08323404B2 Group III nitride crystal and manufacturing method thereof 公开/授权日：2012-12-04
信息查询
IPC分类:
