发明申请
- 专利标题： SEMICONDUCTOR DEVICE HAVING HIGH DRIVE CURRENT AND METHOD OF MANUFACTURE THEREFOR
- 专利标题（中）： 具有高驱动电流的半导体器件及其制造方法
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申请号： US11673845申请日： 2007-02-12
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公开(公告)号： US20070128786A1公开(公告)日： 2007-06-07
- 发明人: Shui-Ming Cheng , Hung-Wei Chen , Zhong Xuan
- 申请人： Shui-Ming Cheng , Hung-Wei Chen , Zhong Xuan
- 申请人地址： TW Science-Based Industrial Park 300-77
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Science-Based Industrial Park 300-77
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A method comprises forming a first semiconductor device in a substrate, where the first semiconductor device comprises a gate structure, a spacer disposed on sidewalls of the gate structure, the spacer having a first thickness, and raised source and drain regions disposed on either side of the gate structure. The method further comprises forming a second semiconductor device in the substrate and electrically isolated from the first semiconductor device, where the second semiconductor device comprises a gate structure, a spacer disposed on sidewalls of the gate structure, the spacer having a second thickness less than the first thickness of the spacer of the first semiconductor device, and recessed source and drain regions disposed on either side of the gate structure.
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