发明申请
- 专利标题： CVD apparatus for depositing polysilicon
- 专利标题（中）： 用于沉积多晶硅的CVD装置
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申请号： US11405091申请日： 2006-04-17
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公开(公告)号： US20070128861A1公开(公告)日： 2007-06-07
- 发明人: Myoung Kim , Han Kim , Seok Jeong
- 申请人： Myoung Kim , Han Kim , Seok Jeong
- 优先权： KR10-2005-39926 20051205
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/44 ; C23C16/00
摘要：
Disclosed is a CVD apparatus for depositing polysilicon without a separate following annealing process, the CVD apparatus comprising: a chamber to form a thin film on a substrate; a showerhead placed in an upper part of the chamber to inject reaction gas onto the substrate; a distributor formed with distributing holes to uniformly distribute the reaction gas; a catalyst hot wire unit to heat and dissolve the reaction gas injected through the distributing holes of the distributor; a chuck on which the substrate is mounted; a discharging hole to discharge the reaction gas; and a shielding wall provided as a lateral wall of the chamber and formed with a heater to suppress particle generation. With this configuration, the particle generation is minimized and thus the yield is enhanced. Also, the thin film has good crystallinity, and decreased hydrogen content.
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