Invention Application
US20070132002A1 Method and structure of an one time programmable memory device in an embedded EEPROM
有权
嵌入式EEPROM中的一次可编程存储器件的方法和结构
- Patent Title: Method and structure of an one time programmable memory device in an embedded EEPROM
- Patent Title (中): 嵌入式EEPROM中的一次可编程存储器件的方法和结构
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Application No.: US11502129Application Date: 2006-08-09
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Publication No.: US20070132002A1Publication Date: 2007-06-14
- Inventor: YiPeng Chan , ShengHe Huang , Jing Lu
- Applicant: YiPeng Chan , ShengHe Huang , Jing Lu
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Priority: CN200510030303.9 20050928
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A structure and a manufacturing method for an OTP-EPROM in an embedded EEPROM integrated circuit structure. The structure has a substrate that includes a surface region. The structure has a gate dielectric is overlying the surface region. The structure also a first OTP-EPROM gate overlying the gate dielectric layer in a first cell region, and an EEPROM floating gate and a select gate overlying the gate dielectric layer in a second cell region. An insulating layer is overlying the first OTP-EPROM gate, the EEPROM floating gate and the select gate. An OTP-EPROM control gate is overlying the insulating layer and coupled to the first OTP-EPROM gate. An EEPROM control gate is overlying the insulating layer and coupled to the EEPROM floating gate.
Public/Granted literature
- US07736967B2 Method and structure of an one time programmable memory device in an embedded EEPROM Public/Granted day:2010-06-15
Information query
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