发明申请
- 专利标题： Semiconductor device and method of manufacturing the semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11445181申请日： 2006-06-02
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公开(公告)号： US20070132021A1公开(公告)日： 2007-06-14
- 发明人: Tetsuo Kunii , Yoshitsugu Yamamoto , Hirotaka Amasuga
- 申请人： Tetsuo Kunii , Yoshitsugu Yamamoto , Hirotaka Amasuga
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 优先权： JP2005-355211 20051208
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor device includes a substrate having a recess, a gate electrode in the recess in the substrate, and a source electrode and a drain electrode disposed on opposite sides of the gate electrode. An insulating film is on at least on a surface of the gate electrode and a portion in the recess, other than where the gate electrode is located, and a shield electrode connected to the source electrode is located on a portion of the insulating film between the gate electrode and the drain electrode.
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