Invention Application
US20070132057A1 Active region spacer for semiconductor devices and method to form the same
有权
用于半导体器件的有源区间隔物及其形成方法
- Patent Title: Active region spacer for semiconductor devices and method to form the same
- Patent Title (中): 用于半导体器件的有源区间隔物及其形成方法
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Application No.: US11298095Application Date: 2005-12-08
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Publication No.: US20070132057A1Publication Date: 2007-06-14
- Inventor: Giuseppe Curello , Ian Post , Chia-Hong Jan , Sunit Tyagi , Mark Bohr
- Applicant: Giuseppe Curello , Ian Post , Chia-Hong Jan , Sunit Tyagi , Mark Bohr
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/76
Abstract:
A semiconductor device and method for its fabrication are described. An active region spacer may be formed on a top surface of an isolation region and adjacent to a sidewall of an active region. In one embodiment, the active region spacer may suppress the formation of metal pipes in the active region.
Public/Granted literature
- US07560780B2 Active region spacer for semiconductor devices and method to form the same Public/Granted day:2009-07-14
Information query
IPC分类:
