发明申请
US20070134589A1 Positive resist composition and pattern forming method using the same
有权
正型抗蚀剂组合物和使用其的图案形成方法
- 专利标题: Positive resist composition and pattern forming method using the same
- 专利标题(中): 正型抗蚀剂组合物和使用其的图案形成方法
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申请号: US11636517申请日: 2006-12-11
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公开(公告)号: US20070134589A1公开(公告)日: 2007-06-14
- 发明人: Kei Yamamoto , Shinichi Kanna , Hiromi Kanda
- 申请人: Kei Yamamoto , Shinichi Kanna , Hiromi Kanda
- 申请人地址: JP Minato-ku
- 专利权人: FUJIFILM Corporation
- 当前专利权人: FUJIFILM Corporation
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2005-356719 20051209; JP2006-075070 20060317; JP2006-257553 20060922
- 主分类号: G03C1/00
- IPC分类号: G03C1/00
摘要:
A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (C) a resin having at least one repeating unit selected from fluorine atom-containing repeating units represented by the following formulae (1-1), (1-2) and (1-3), the resin being stable to an acid and insoluble in an alkali developer, and (D) a solvent: wherein R1 represents a hydrogen atom or an alkyl group; R2 represents a fluoroalkyl group; R3 represents a hydrogen atom or a monovalent organic group; R4 to R7 each independently represents a hydrogen atom, a fluorine atom, an alkyl group, a fluoroalkyl group, an alkoxy group or a fluoroalkoxy group, provided that at least one of R4 to R7 represents a fluorine atom, and R4 and R5, or R6 and R7 may combine to form a ring; R8 represents a hydrogen atom, a fluorine atom or a monovalent organic group; Rf represents a fluorine atom or a fluorine atom-containing monovalent organic group; L represents a single bond or a divalent linking group; Q represents an alicyclic structure; and k represents an integer of 0 to 3.
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