公开(公告)号：USD806507S1

公开(公告)日：2018-01-02

申请号：US29561450

申请日：2016-04-15

申请人： Atsuro Nakano ,  Kei Yamamoto

设计人： Atsuro Nakano ,  Kei Yamamoto

公开(公告)号：US09390995B2

公开(公告)日：2016-07-12

申请号：US14370803

申请日：2012-07-25

申请人： Kei Yamamoto ,  Kazuhiro Tada ,  Hideki Komori ,  Toru Kimura ,  Masaki Goto ,  Hiroyuki Yoshihara

发明人： Kei Yamamoto ,  Kazuhiro Tada ,  Hideki Komori ,  Toru Kimura ,  Masaki Goto ,  Hiroyuki Yoshihara

IPC分类号： H01L23/367 ,  H01L23/34 ,  B23P15/26 ,  H01L23/433 ,  H01L21/48 ,  H01L23/31 ,  H01L21/56 ,  H01L23/373 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L23/3672 ,  H01L21/4871 ,  H01L21/4882 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/4334 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first main face; an insulating layer formed on a second main face of the base plate, the second main face being opposite to the first main face of the base plate; a circuit pattern fixed to the insulating layer; and a semiconductor element joined to the circuit pattern. The fins are formed with slits that pass through in the thickness direction of the fins.

摘要翻译： 目的在于提供一种鳍状集成型半导体器件及其制造方法，其具有简单的结构和良好的散热特性。 半导体器件包括：在第一主面上形成有以直立状态排列的翅片的基板; 绝缘层，形成在所述基板的第二主面上，所述第二主面与所述基板的所述第一主面相对; 固定到所述绝缘层的电路图案; 以及连接到电路图案的半导体元件。 翅片形成有沿翅片的厚度方向穿过的狭缝。

公开(公告)号：US09320173B2

公开(公告)日：2016-04-19

申请号：US14374363

申请日：2013-02-18

申请人： Kei Yamamoto ,  Kazuhiro Tada

发明人： Kei Yamamoto ,  Kazuhiro Tada

IPC分类号： H01L23/00 ,  H01L21/56 ,  H05K7/20 ,  H01L23/31 ,  H01L23/367 ,  H01L23/433 ,  H01L23/495 ,  H01L25/07

CPC分类号： H05K7/20409 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/367 ,  H01L23/4334 ,  H01L23/49568 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/83951 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device includes a base plate having a first major plane and a second major plane opposite to each other, and having a plurality of fins held upright on the first major plane and a bulge portion formed on the first major plane to encircle the plurality of fins, an insulation layer formed on the second major plane of the base plate, a circuit pattern fixed to the insulation layer, a semiconductor element connected to the circuit pattern, and a sealing resin sealing the insulation layer, the circuit pattern, and the semiconductor element. The bulge portion formed on the first major plane continuously encircles the plurality of fins, the bulge portion has a widthwise margin on an outer peripheral edge of the base plate, and the sealing resin covers an outer peripheral side face of the bulge portion and the widthwise margin.

摘要翻译： 一种半导体器件包括具有第一主平面和相互相对的第二主平面的基板，并且具有在第一主平面上竖直放置的多个翅片和形成在第一主平面上的凸起部分以包围多个 翅片，形成在基板的第二主平面上的绝缘层，固定到绝缘层的电路图案，连接到电路图案的半导体元件以及密封绝缘层，电路图案和半导体的密封树脂 元件。 形成在第一主平面上的凸起部连续地包围多个翅片，凸起部在基板的外周边缘上具有宽度方向的边缘，密封树脂覆盖凸部的外周侧面，宽度方向 保证金

公开(公告)号：USD731937S1

公开(公告)日：2015-06-16

申请号：US29485256

申请日：2014-03-18

申请人： Isamu Masakawa ,  Kei Yamamoto

设计人： Isamu Masakawa ,  Kei Yamamoto

公开(公告)号：US08790860B2

公开(公告)日：2014-07-29

申请号：US13610271

申请日：2012-09-11

申请人： Kosuke Koshijima ,  Hidenori Takahashi ,  Shuhei Yamaguchi ,  Kei Yamamoto

发明人： Kosuke Koshijima ,  Hidenori Takahashi ,  Shuhei Yamaguchi ,  Kei Yamamoto

IPC分类号： G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32

CPC分类号： G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0755 ,  G03F7/0758 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/40 ,  Y10T428/24479

摘要： An actinic ray-sensitive or radiation-sensitive resin composition capable of forming a hole pattern which has an ultrafine pore diameter (for example, 60 nm or less) and has an excellent cross-sectional shape with excellent local pattern dimensional uniformity; and a resist film, a pattern forming method, a method for preparing an electronic device, and an electronic device, each using the same, are provided.The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin containing 30 mol % or more of a repeating unit (a) represented by the following general formula (I) based on all the repeating units; (B) a compound capable of generating an acid upon irradiation of actinic rays or radiation; and (G) a compound having at least one of a fluorine atom and a silicon atom, and further having basicity or being capable of increasing the basicity by an action of an acid:

摘要翻译： 能够形成具有超细孔径（例如60nm以下）的孔图案并且具有优异的局部图案尺寸均匀性的截面形状优异的光化射线敏感或辐射敏感性树脂组合物; 并且提供了各自使用它们的抗蚀剂膜，图案形成方法，制备电子设备的方法和电子设备。 光化射线敏感性或辐射敏感性树脂组合物包含（P）基于所有重复单元含有30mol％以上由以下通式（I）表示的重复单元（a）的树脂的树脂; （B）能够在光化射线或辐射照射时能产生酸的化合物; 和（G）具有氟原子和硅原子中的至少一个的化合物，并且还具有碱性或能够通过酸的作用增加碱度：

公开(公告)号：US20100226095A1

公开(公告)日：2010-09-09

申请号：US12675549

申请日：2008-09-12

申请人： Kenji Mimura ,  Hideki Takigawa ,  Hiroki Shiota ,  Kazuhiro Tada ,  Takashi Nishimura ,  Hiromi Ito ,  Seiki Hiramatsu ,  Atsuko Fujino ,  Kei Yamamoto ,  Motoki Masaki

发明人： Kenji Mimura ,  Hideki Takigawa ,  Hiroki Shiota ,  Kazuhiro Tada ,  Takashi Nishimura ,  Hiromi Ito ,  Seiki Hiramatsu ,  Atsuko Fujino ,  Kei Yamamoto ,  Motoki Masaki

IPC分类号： H05K7/20 ,  F28F7/00 ,  B21D53/02

CPC分类号： H01L23/3737 ,  F28F2013/006 ,  H01L23/4334 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/29499 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/01019 ,  H01L2924/181 ,  Y10T29/4935 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided is a heat conductive sheet obtained by dispersing an inorganic filler in a thermosetting resin, in which the inorganic filler contains secondary aggregation particles formed by isotropically aggregating scaly boron nitride primary particles having an average length of 15 μm or less, and the inorganic filler contains more than 20 vol % of the secondary aggregation particles each having a particle diameter of 50 μm or more. The heat conductive sheet is advantageous in terms of productivity and cost and excellent in heat conductivity and electrical insulating properties.

摘要翻译： 提供了一种通过将无机填料分散在热固性树脂中而获得的导热片，其中无机填料含有通过各向同性地聚集平均长度为15μm以下的鳞片状氮化硼一次粒子形成的二次凝集粒子，无机填料含有 大于20体积％的二次聚集粒子各自具有50μm以上的粒径。 导热片在生产率和成本方面是有利的，并且导热性和电绝缘性能优异。

公开(公告)号：US20100033302A1

公开(公告)日：2010-02-11

申请号：US12360784

申请日：2009-01-27

申请人： Kei Yamamoto

发明人： Kei Yamamoto

IPC分类号： G05B19/00

CPC分类号： G06K9/00899 ,  G06K9/00771 ,  G06K9/00885 ,  G06K9/3241 ,  G06K2009/00966 ,  H04N5/232 ,  H04N5/23296

摘要： An imaging processing system includes one or more image capturing apparatuses, a reading unit configured to read biometric information from an authentication object person, a similarity calculation unit configured to calculate similarity based on a result of comparing biometric information read by the reading unit with true biometric information of the authentication object person, an authentication unit configured to perform authentication based on a comparison between the similarity calculated by the similarity calculation unit and a preliminarily set threshold, and a control unit configured to control, if the authentication performed by the authentication unit is successful, imaging processing, which is performed by the image capturing apparatus, based on the similarity calculated by the similarity calculation unit.

摘要翻译： 一种成像处理系统包括一个或多个图像捕获装置，读取单元，被配置为从认证对象人员读取生物信息;相似度计算单元，被配置为基于将读取单元读取的生物特征信息与真实生物特征进行比较的结果来计算相似度 认证对象人的信息，被配置为基于由相似度计算单元计算的相似度与预先设定的阈值之间的比较进行认证的认证单元以及控制单元，被配置为如果认证单元执行的认证是 基于由所述相似度计算单元计算的相似度，由所述摄像装置执行的成功的成像处理。

公开(公告)号：US07632623B2

公开(公告)日：2009-12-15

申请号：US11717083

申请日：2007-03-13

申请人： Kaoru Iwato ,  Kunihiko Kodama ,  Yuko Yoshida ,  Kei Yamamoto

发明人： Kaoru Iwato ,  Kunihiko Kodama ,  Yuko Yoshida ,  Kei Yamamoto

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111

摘要： A positive resist composition comprising: a resin which increases solubility in an alkali developing solution by an action of an acid and comprises a repeating unit containing a lactone structure and a cyano group, a repeating unit containing a first group selected from groups represented by the formulae (pI) to (pV) as defined herein and a repeating unit containing a second group selected from groups represented by the formulae (pI) to (pV) as defined herein which is different from the first group; a compound which generates an acid upon irradiation of an actinic ray or a radiation; and a solvent.

摘要翻译： 一种正性抗蚀剂组合物，其包含：通过酸的作用增加在碱性显影液中的溶解度的树脂，其包含含有内酯结构和氰基的重复单元，含有选自下式 （pI）至（pV）和含有选自如本文定义的与第一组不同的由式（pI）至（pV）表示的基团的第二基团的重复单元; 在光化射线或辐射照射时产生酸的化合物; 和溶剂。

公开(公告)号：US20090080485A1

公开(公告)日：2009-03-26

申请号：US12232588

申请日：2008-09-19

申请人： Yukio Yamasaki ,  Kei Yamamoto

发明人： Yukio Yamasaki ,  Kei Yamamoto

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L2224/48091 ,  H01L2924/01322 ,  H01L2924/3025 ,  H01S5/0224 ,  H01S5/02264 ,  H01S5/02272 ,  H01S5/024 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/2231 ,  H01S5/4031 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to a nitride semiconductor laser device having a structure in which two or more of nitride semiconductor laser elements, having at least a first electrode on a first main surface of a first conductive type conductive substrate, having at least a first conductive type nitride semiconductor layer, an active layer, a second conductive type nitride semiconductor layer, and a second electrode on a second main surface of the conductive substrate, and having a stripe-waveguide structure parallel to the first main surface, are arranged in a direction parallel to the first main surface and a direction perpendicular to the direction of light that is emitted from the stripe waveguide structure in the nitride semiconductor laser device, and the first sub-mount and the first electrode of the nitride semiconductor laser element are electrically and heat-conductively connected, and the second sub-mount and the second electrode of the nitride semiconductor laser element are electrically and heat-conductively connected.

摘要翻译： 本发明涉及一种氮化物半导体激光器件，其结构是在第一导电型导电性基板的第一主面上具有至少第一电极的至少具有第一导电型的氮化物半导体激光元件 氮化物半导体层，有源层，第二导电型氮化物半导体层和在导电性基板的第二主面上的第二电极，并且具有平行于第一主表面的条状波导结构， 并且与氮化物半导体激光器件中的条状波导结构发射的光的方向垂直的方向，并且氮化物半导体激光元件的第一子安装座和第一电极是电气和热交换的， 导电连接，氮化物半导体激光元件a的第二子座和第二电极 电和导热连接。

公开(公告)号：US07197056B2

公开(公告)日：2007-03-27

申请号：US10494946

申请日：2002-11-13

申请人： Yoshie Fujishiro ,  Ken Ohbayashi ,  Kei Yamamoto

发明人： Yoshie Fujishiro ,  Ken Ohbayashi ,  Kei Yamamoto

IPC分类号： H01S5/34 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/3434 ,  H01S5/34373 ,  H01S2301/00 ,  H01S2302/00

摘要： A 780 nm band semiconductor laser device has an InGaAsP well layer, phosphorous composition of which is 0.51 smaller than 0.55 to prevent spinodal decomposition in growing InGaAsP. A compressive strain of 0.65% less than 1% and more than 0.25% is introduced into the well layer to reduce threshold current thereof. Thus, the 0.78-μm band semiconductor laser device having the InGaAsP well layer stably operates for a long time even in outputting a high optical power of 100 mW or more. A tensile strain of 1.2% is also introduced into barrier layers within the active region so as to compensate the stress due to the compressive strain of the well layer. As a result, the reliability of the semiconductor laser device is further increased during a high output operation.

摘要翻译： 780nm波段半导体激光器件具有InGaAsP阱层，其磷组合物为小于0.55的0.51以防止生长的InGaAsP中的亚稳态分解。 向阱层中引入小于1％且大于0.25％的0.65％的压缩应变以降低其阈值电流。 因此，即使在输出100mW以上的高光功率的情况下，具有InGaAsP阱层的0.78-微波带半导体激光器件也能够长时间稳定地工作。 1.2％的拉伸应变也被引入有源区域内的阻挡层，以补偿由于阱层的压缩应变引起的应力。 结果，在高输出操作期间，半导体激光器件的可靠性进一步提高。