发明申请
- 专利标题: Frequency tuning of film bulk acoustic resonators (FBAR)
- 专利标题(中): 薄膜体声共振器(FBAR)的频率调谐
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申请号: US11314361申请日: 2005-12-20
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公开(公告)号: US20070139140A1公开(公告)日: 2007-06-21
- 发明人: Valluri Rao , Theodore Doros , Qing Ma , Krishna Seshan , Li-Peng Wang
- 申请人: Valluri Rao , Theodore Doros , Qing Ma , Krishna Seshan , Li-Peng Wang
- 主分类号: H03H9/58
- IPC分类号: H03H9/58
摘要:
Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.
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